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Effect of Gate Oxide Defects on Tunnel Transistor RF Performance

Hellenbrand, Markus LU ; Memisevic, Elvedin LU ; Svensson, Johannes LU ; Krishnaraja, Abinaya LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2018) 76th Device Research Conference p.137-138
Abstract
Tunnel field-effect transistors (TFETs) are designed for low off-state leakage and low drive voltages. To investigate how capable TFETs are of RF operation, we measured their scattering parameters and performed small-signal modeling. We find that in the low frequency ranges, gate oxide defects have a major influence on the RF performance of these devices, which can be modeled by a frequency-dependent gate-to-drain conductance ggd;w. This model is based on charge trapping in gate oxide defects and was studied before for metal-oxide-semiconductor capacitors.
Please use this url to cite or link to this publication:
author
; ; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
2018 76th Device Research Conference (DRC)
pages
2 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
76th Device Research Conference
conference location
Santa Barbara, United States
conference dates
2018-07-24 - 2018-07-27
external identifiers
  • scopus:85053179369
ISBN
978-1-5386-3028-0
DOI
10.1109/DRC.2018.8442145
language
English
LU publication?
yes
id
11fd53bb-4933-400f-8e39-0638a248d761
date added to LUP
2018-07-24 10:47:39
date last changed
2023-09-08 04:28:42
@inproceedings{11fd53bb-4933-400f-8e39-0638a248d761,
  abstract     = {{Tunnel field-effect transistors (TFETs) are designed for low off-state leakage and low drive voltages. To investigate how capable TFETs are of RF operation, we measured their scattering parameters and performed small-signal modeling. We find that in the low frequency ranges, gate oxide defects have a major influence on the RF performance of these devices, which can be modeled by a frequency-dependent gate-to-drain conductance ggd;w. This model is based on charge trapping in gate oxide defects and was studied before for metal-oxide-semiconductor capacitors.}},
  author       = {{Hellenbrand, Markus and Memisevic, Elvedin and Svensson, Johannes and Krishnaraja, Abinaya and Lind, Erik and Wernersson, Lars-Erik}},
  booktitle    = {{2018 76th Device Research Conference (DRC)}},
  isbn         = {{978-1-5386-3028-0}},
  language     = {{eng}},
  month        = {{06}},
  pages        = {{137--138}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{Effect of Gate Oxide Defects on Tunnel Transistor RF Performance}},
  url          = {{https://lup.lub.lu.se/search/files/48383474/Gate_Oxide_Defects_on_TFET_RF_MHE_LU_upload.pdf}},
  doi          = {{10.1109/DRC.2018.8442145}},
  year         = {{2018}},
}