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Effect of Gate Oxide Defects on Tunnel Transistor RF Performance

Hellenbrand, Markus LU ; Memisevic, Elvedin LU ; Svensson, Johannes LU ; Krishnaraja, Abinaya LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2018) 76th Device Research Conference p.137-138
Abstract
Tunnel field-effect transistors (TFETs) are designed for low off-state leakage and low drive voltages. To investigate how capable TFETs are of RF operation, we measured their scattering parameters and performed small-signal modeling. We find that in the low frequency ranges, gate oxide defects have a major influence on the RF performance of these devices, which can be modeled by a frequency-dependent gate-to-drain conductance ggd;w. This model is based on charge trapping in gate oxide defects and was studied before for metal-oxide-semiconductor capacitors.
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
2018 76th Device Research Conference (DRC)
pages
2 pages
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
76th Device Research Conference
conference location
Santa Barbara, United States
conference dates
2018-07-24 - 2018-07-27
external identifiers
  • scopus:85053179369
ISBN
978-1-5386-3028-0
DOI
10.1109/DRC.2018.8442145
language
English
LU publication?
yes
id
11fd53bb-4933-400f-8e39-0638a248d761
date added to LUP
2018-07-24 10:47:39
date last changed
2019-05-13 15:49:40
@inproceedings{11fd53bb-4933-400f-8e39-0638a248d761,
  abstract     = {Tunnel field-effect transistors (TFETs) are designed for low off-state leakage and low drive voltages. To investigate how capable TFETs are of RF operation, we measured their scattering parameters and performed small-signal modeling. We find that in the low frequency ranges, gate oxide defects have a major influence on the RF performance of these devices, which can be modeled by a frequency-dependent gate-to-drain conductance ggd;w. This model is based on charge trapping in gate oxide defects and was studied before for metal-oxide-semiconductor capacitors.},
  author       = {Hellenbrand, Markus and Memisevic, Elvedin and Svensson, Johannes and Krishnaraja, Abinaya and Lind, Erik and Wernersson, Lars-Erik},
  isbn         = {978-1-5386-3028-0 },
  language     = {eng},
  location     = {Santa Barbara, United States},
  month        = {06},
  pages        = {137--138},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  title        = {Effect of Gate Oxide Defects on Tunnel Transistor RF Performance},
  url          = {http://dx.doi.org/10.1109/DRC.2018.8442145},
  year         = {2018},
}