Effect of Gate Oxide Defects on Tunnel Transistor RF Performance
(2018) 76th Device Research Conference p.137-138- Abstract
- Tunnel field-effect transistors (TFETs) are designed for low off-state leakage and low drive voltages. To investigate how capable TFETs are of RF operation, we measured their scattering parameters and performed small-signal modeling. We find that in the low frequency ranges, gate oxide defects have a major influence on the RF performance of these devices, which can be modeled by a frequency-dependent gate-to-drain conductance ggd;w. This model is based on charge trapping in gate oxide defects and was studied before for metal-oxide-semiconductor capacitors.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/11fd53bb-4933-400f-8e39-0638a248d761
- author
- Hellenbrand, Markus LU ; Memisevic, Elvedin LU ; Svensson, Johannes LU ; Krishnaraja, Abinaya LU ; Lind, Erik LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2018-06-25
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- 2018 76th Device Research Conference (DRC)
- pages
- 2 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 76th Device Research Conference
- conference location
- Santa Barbara, United States
- conference dates
- 2018-07-24 - 2018-07-27
- external identifiers
-
- scopus:85053179369
- ISBN
- 978-1-5386-3028-0
- DOI
- 10.1109/DRC.2018.8442145
- language
- English
- LU publication?
- yes
- id
- 11fd53bb-4933-400f-8e39-0638a248d761
- date added to LUP
- 2018-07-24 10:47:39
- date last changed
- 2024-03-01 22:26:13
@inproceedings{11fd53bb-4933-400f-8e39-0638a248d761, abstract = {{Tunnel field-effect transistors (TFETs) are designed for low off-state leakage and low drive voltages. To investigate how capable TFETs are of RF operation, we measured their scattering parameters and performed small-signal modeling. We find that in the low frequency ranges, gate oxide defects have a major influence on the RF performance of these devices, which can be modeled by a frequency-dependent gate-to-drain conductance ggd;w. This model is based on charge trapping in gate oxide defects and was studied before for metal-oxide-semiconductor capacitors.}}, author = {{Hellenbrand, Markus and Memisevic, Elvedin and Svensson, Johannes and Krishnaraja, Abinaya and Lind, Erik and Wernersson, Lars-Erik}}, booktitle = {{2018 76th Device Research Conference (DRC)}}, isbn = {{978-1-5386-3028-0}}, language = {{eng}}, month = {{06}}, pages = {{137--138}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Effect of Gate Oxide Defects on Tunnel Transistor RF Performance}}, url = {{https://lup.lub.lu.se/search/files/48383474/Gate_Oxide_Defects_on_TFET_RF_MHE_LU_upload.pdf}}, doi = {{10.1109/DRC.2018.8442145}}, year = {{2018}}, }