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High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current

Zota, Cezar B. LU ; Wernersson, Lars Erik LU and Lind, Erik LU (2016) In IEEE Electron Device Letters 37(10). p.1264-1267
Abstract

We report on In0.85Ga0.15As MOSFETs utilizing selectively grown lateral nanowires as the channel. These devices exhibit ON-current of ION = 565μ/Aμm at IOFF =100 nA/μm and VD=0.5 V, which is higher than all other reported values for III-V FETs. This is enabled by a transconductance of 2.9 mS/μm and a minimum SSsat of 77 mV/decade. A ballistic top-of-the-barrier model is used to model these devices and to predict their ultimate performance, which is approximately twice that of the fabricated devices.

Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
III-V, InGaAs, MOSFET, nanowire
in
IEEE Electron Device Letters
volume
37
issue
10
pages
4 pages
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:84989828127
  • wos:000385371100002
ISSN
0741-3106
DOI
10.1109/LED.2016.2602841
language
English
LU publication?
yes
id
433fb5a5-db95-4880-a42e-66a2aeeeda04
date added to LUP
2016-10-21 11:51:31
date last changed
2017-09-10 05:10:46
@article{433fb5a5-db95-4880-a42e-66a2aeeeda04,
  abstract     = {<p>We report on In<sub>0.85</sub>Ga<sub>0.15</sub>As MOSFETs utilizing selectively grown lateral nanowires as the channel. These devices exhibit ON-current of I<sub>ON</sub> = 565μ/Aμm at I<sub>OFF</sub> =100 nA/μm and V<sub>D</sub>=0.5 V, which is higher than all other reported values for III-V FETs. This is enabled by a transconductance of 2.9 mS/μm and a minimum SS<sub>sat</sub> of 77 mV/decade. A ballistic top-of-the-barrier model is used to model these devices and to predict their ultimate performance, which is approximately twice that of the fabricated devices.</p>},
  articleno    = {7552490},
  author       = {Zota, Cezar B. and Wernersson, Lars Erik and Lind, Erik},
  issn         = {0741-3106},
  keyword      = {III-V,InGaAs,MOSFET,nanowire},
  language     = {eng},
  month        = {10},
  number       = {10},
  pages        = {1264--1267},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Electron Device Letters},
  title        = {High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current},
  url          = {http://dx.doi.org/10.1109/LED.2016.2602841},
  volume       = {37},
  year         = {2016},
}