High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current
(2016) In IEEE Electron Device Letters 37(10). p.1264-1267- Abstract
We report on In0.85Ga0.15As MOSFETs utilizing selectively grown lateral nanowires as the channel. These devices exhibit ON-current of ION = 565μ/Aμm at IOFF =100 nA/μm and VD=0.5 V, which is higher than all other reported values for III-V FETs. This is enabled by a transconductance of 2.9 mS/μm and a minimum SSsat of 77 mV/decade. A ballistic top-of-the-barrier model is used to model these devices and to predict their ultimate performance, which is approximately twice that of the fabricated devices.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/433fb5a5-db95-4880-a42e-66a2aeeeda04
- author
- Zota, Cezar B. LU ; Wernersson, Lars Erik LU and Lind, Erik LU
- organization
- publishing date
- 2016-10-01
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- III-V, InGaAs, MOSFET, nanowire
- in
- IEEE Electron Device Letters
- volume
- 37
- issue
- 10
- article number
- 7552490
- pages
- 4 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- wos:000385371100002
- scopus:84989828127
- ISSN
- 0741-3106
- DOI
- 10.1109/LED.2016.2602841
- language
- English
- LU publication?
- yes
- id
- 433fb5a5-db95-4880-a42e-66a2aeeeda04
- date added to LUP
- 2016-10-21 11:51:31
- date last changed
- 2024-01-04 14:48:18
@article{433fb5a5-db95-4880-a42e-66a2aeeeda04, abstract = {{<p>We report on In<sub>0.85</sub>Ga<sub>0.15</sub>As MOSFETs utilizing selectively grown lateral nanowires as the channel. These devices exhibit ON-current of I<sub>ON</sub> = 565μ/Aμm at I<sub>OFF</sub> =100 nA/μm and V<sub>D</sub>=0.5 V, which is higher than all other reported values for III-V FETs. This is enabled by a transconductance of 2.9 mS/μm and a minimum SS<sub>sat</sub> of 77 mV/decade. A ballistic top-of-the-barrier model is used to model these devices and to predict their ultimate performance, which is approximately twice that of the fabricated devices.</p>}}, author = {{Zota, Cezar B. and Wernersson, Lars Erik and Lind, Erik}}, issn = {{0741-3106}}, keywords = {{III-V; InGaAs; MOSFET; nanowire}}, language = {{eng}}, month = {{10}}, number = {{10}}, pages = {{1264--1267}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Electron Device Letters}}, title = {{High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current}}, url = {{https://lup.lub.lu.se/search/files/25557746/CBZ_EDL_2016_Rev1.pdf}}, doi = {{10.1109/LED.2016.2602841}}, volume = {{37}}, year = {{2016}}, }