High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
Johansson, Sofia LU ; Gorji, Sepideh LU ; Egard, Mikael LU ; Borg, Mattias LU
; Berg, Martin
LU
; Wernersson, Lars-Erik
LU
and Lind, Erik
LU
(2012)
38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week
In Physica Status Solidi. C, Current Topics in Solid State Physics
9(2).
p.350-353
- Abstract
- RF and DC characterization of vertical InAs nanowire MOSFET on Si substrates are presented. Nanowire arrays are epitaxially integrated on Si substrates by use of a thin InAs buffer layer. For device fabrication, high-k HfO2 gate dielectric and wrap-gates are used. Post-deposition annealing of the high-k is evaluated by comparing one annealed and one not-annealed sample. The annealed sample show better DC characteristics in terms of transconductance, g(m) = 155 mS/mm, and on-current, I-on = 550 mA/mm. Box plots of on-current, on-resistance and transconductance for all 190-nanowire-array transistors on the annealed sample suggest that the electrical properties of the nanowires are preserved when scaling the nanowire diameter. Finally, high... (More)
- RF and DC characterization of vertical InAs nanowire MOSFET on Si substrates are presented. Nanowire arrays are epitaxially integrated on Si substrates by use of a thin InAs buffer layer. For device fabrication, high-k HfO2 gate dielectric and wrap-gates are used. Post-deposition annealing of the high-k is evaluated by comparing one annealed and one not-annealed sample. The annealed sample show better DC characteristics in terms of transconductance, g(m) = 155 mS/mm, and on-current, I-on = 550 mA/mm. Box plots of on-current, on-resistance and transconductance for all 190-nanowire-array transistors on the annealed sample suggest that the electrical properties of the nanowires are preserved when scaling the nanowire diameter. Finally, high frequency characterisation yields a unity current gain cut-off frequency of f(t) = 9.3 GHz for the annealed sample and f(t) = 2.0 GHz for the not-annealed sample. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2494907
- author
- Johansson, Sofia
LU
; Gorji, Sepideh
LU
; Egard, Mikael
LU
; Borg, Mattias
LU
; Berg, Martin
LU
; Wernersson, Lars-Erik
LU
and Lind, Erik
LU
- organization
- publishing date
- 2012
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- high-k, annealing, InAs, high frequency, nanowire, MOSFET
- in
- Physica Status Solidi. C, Current Topics in Solid State Physics
- volume
- 9
- issue
- 2
- pages
- 350 - 353
- publisher
- John Wiley & Sons Inc.
- conference name
- 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week
- conference location
- Berlin, Germany
- conference dates
- 2011-05-22 - 2011-05-26
- external identifiers
-
- wos:000301540900049
- scopus:84856155859
- ISSN
- 1610-1634
- DOI
- 10.1002/pssc.201100249
- language
- English
- LU publication?
- yes
- id
- 32f71dc4-ea50-44b9-a42b-043d068986f6 (old id 2494907)
- date added to LUP
- 2016-04-01 09:59:48
- date last changed
- 2023-09-11 16:17:13
@article{32f71dc4-ea50-44b9-a42b-043d068986f6,
abstract = {{RF and DC characterization of vertical InAs nanowire MOSFET on Si substrates are presented. Nanowire arrays are epitaxially integrated on Si substrates by use of a thin InAs buffer layer. For device fabrication, high-k HfO2 gate dielectric and wrap-gates are used. Post-deposition annealing of the high-k is evaluated by comparing one annealed and one not-annealed sample. The annealed sample show better DC characteristics in terms of transconductance, g(m) = 155 mS/mm, and on-current, I-on = 550 mA/mm. Box plots of on-current, on-resistance and transconductance for all 190-nanowire-array transistors on the annealed sample suggest that the electrical properties of the nanowires are preserved when scaling the nanowire diameter. Finally, high frequency characterisation yields a unity current gain cut-off frequency of f(t) = 9.3 GHz for the annealed sample and f(t) = 2.0 GHz for the not-annealed sample. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim}},
author = {{Johansson, Sofia and Gorji, Sepideh and Egard, Mikael and Borg, Mattias and Berg, Martin and Wernersson, Lars-Erik and Lind, Erik}},
issn = {{1610-1634}},
keywords = {{high-k; annealing; InAs; high frequency; nanowire; MOSFET}},
language = {{eng}},
number = {{2}},
pages = {{350--353}},
publisher = {{John Wiley & Sons Inc.}},
series = {{Physica Status Solidi. C, Current Topics in Solid State Physics}},
title = {{High frequency vertical InAs nanowire MOSFETs integrated on Si substrates}},
url = {{http://dx.doi.org/10.1002/pssc.201100249}},
doi = {{10.1002/pssc.201100249}},
volume = {{9}},
year = {{2012}},
}