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RF reliability of gate last InGaAs nMOSFETs with high-k dielectric

Roll, Guntrade LU ; Egard, Mikael LU ; Johannson, Sofia LU ; Ohlsson, Lars LU orcid ; Wernersson, Lars Erik LU and Lind, Erik LU (2013) 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013 p.38-41
Abstract

A complete reliability study of the high-frequency characteristics for nMOSFETs on InGaAs channel with Al2O3/HfO2 gate dielectric is presented. DC gate voltage stress causes an increase in the transconductance frequency dispersion. Stress induced border traps degrade the maximum DC-transconductance, but do not react at high frequencies. The main degradation characteristics of the high-frequency measurements can be modeled by the threshold voltage related transconductance shift. The maximum of the cut-off frequency is shifted with stress to higher or lower gate biases, but not decreased.

Please use this url to cite or link to this publication:
author
; ; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
high-k, InGaAs, MOSFET, reliability, RF
host publication
2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013
article number
6804151
pages
4 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013
conference location
South Lake Tahoe, CA, United States
conference dates
2013-10-13 - 2013-10-17
external identifiers
  • scopus:84900493882
ISBN
9781479903504
DOI
10.1109/IIRW.2013.6804151
language
English
LU publication?
yes
id
99ea2c5f-207c-46b0-b0bd-390fbcbec42b
date added to LUP
2019-06-17 12:20:43
date last changed
2022-01-31 21:57:27
@inproceedings{99ea2c5f-207c-46b0-b0bd-390fbcbec42b,
  abstract     = {{<p>A complete reliability study of the high-frequency characteristics for nMOSFETs on InGaAs channel with Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> gate dielectric is presented. DC gate voltage stress causes an increase in the transconductance frequency dispersion. Stress induced border traps degrade the maximum DC-transconductance, but do not react at high frequencies. The main degradation characteristics of the high-frequency measurements can be modeled by the threshold voltage related transconductance shift. The maximum of the cut-off frequency is shifted with stress to higher or lower gate biases, but not decreased.</p>}},
  author       = {{Roll, Guntrade and Egard, Mikael and Johannson, Sofia and Ohlsson, Lars and Wernersson, Lars Erik and Lind, Erik}},
  booktitle    = {{2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013}},
  isbn         = {{9781479903504}},
  keywords     = {{high-k; InGaAs; MOSFET; reliability; RF}},
  language     = {{eng}},
  month        = {{01}},
  pages        = {{38--41}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{RF reliability of gate last InGaAs nMOSFETs with high-k dielectric}},
  url          = {{http://dx.doi.org/10.1109/IIRW.2013.6804151}},
  doi          = {{10.1109/IIRW.2013.6804151}},
  year         = {{2013}},
}