RF reliability of gate last InGaAs nMOSFETs with high-k dielectric
(2013) 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013 p.38-41- Abstract
A complete reliability study of the high-frequency characteristics for nMOSFETs on InGaAs channel with Al2O3/HfO2 gate dielectric is presented. DC gate voltage stress causes an increase in the transconductance frequency dispersion. Stress induced border traps degrade the maximum DC-transconductance, but do not react at high frequencies. The main degradation characteristics of the high-frequency measurements can be modeled by the threshold voltage related transconductance shift. The maximum of the cut-off frequency is shifted with stress to higher or lower gate biases, but not decreased.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/99ea2c5f-207c-46b0-b0bd-390fbcbec42b
- author
- Roll, Guntrade LU ; Egard, Mikael LU ; Johannson, Sofia LU ; Ohlsson, Lars LU ; Wernersson, Lars Erik LU and Lind, Erik LU
- organization
- publishing date
- 2013-01-01
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- high-k, InGaAs, MOSFET, reliability, RF
- host publication
- 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013
- article number
- 6804151
- pages
- 4 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013
- conference location
- South Lake Tahoe, CA, United States
- conference dates
- 2013-10-13 - 2013-10-17
- external identifiers
-
- scopus:84900493882
- ISBN
- 9781479903504
- DOI
- 10.1109/IIRW.2013.6804151
- language
- English
- LU publication?
- yes
- id
- 99ea2c5f-207c-46b0-b0bd-390fbcbec42b
- date added to LUP
- 2019-06-17 12:20:43
- date last changed
- 2022-01-31 21:57:27
@inproceedings{99ea2c5f-207c-46b0-b0bd-390fbcbec42b, abstract = {{<p>A complete reliability study of the high-frequency characteristics for nMOSFETs on InGaAs channel with Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> gate dielectric is presented. DC gate voltage stress causes an increase in the transconductance frequency dispersion. Stress induced border traps degrade the maximum DC-transconductance, but do not react at high frequencies. The main degradation characteristics of the high-frequency measurements can be modeled by the threshold voltage related transconductance shift. The maximum of the cut-off frequency is shifted with stress to higher or lower gate biases, but not decreased.</p>}}, author = {{Roll, Guntrade and Egard, Mikael and Johannson, Sofia and Ohlsson, Lars and Wernersson, Lars Erik and Lind, Erik}}, booktitle = {{2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013}}, isbn = {{9781479903504}}, keywords = {{high-k; InGaAs; MOSFET; reliability; RF}}, language = {{eng}}, month = {{01}}, pages = {{38--41}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{RF reliability of gate last InGaAs nMOSFETs with high-k dielectric}}, url = {{http://dx.doi.org/10.1109/IIRW.2013.6804151}}, doi = {{10.1109/IIRW.2013.6804151}}, year = {{2013}}, }