Advanced

Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

Persson, Karl-Magnus LU ; Berg, Martin LU ; Borg, Mattias LU ; Wu, Jun LU ; Johansson, Sofia LU ; Svensson, Johannes LU ; Jansson, Kristofer LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2013) In IEEE Transactions on Electron Devices 60(9). p.2761-2767
Abstract
This paper presents DC and RF characterization as

well as modeling of vertical InAs nanowire MOSFETs with LG =

200 nm and Al2O3/HfO2 high-κ dielectric. Measurements at VDS =

0.5 V show that high transconductance (gm = 1.37 mS/μm), high

drive current (IDS = 1.34 mA/μm), and low on-resistance (RON =

287 Ωμm) can be realized using vertical InAs nanowires on Si

substrates. By measuring the 1/f-noise, the gate area normalized

gate voltage noise spectral density, SVG·LG·WG, is determined to

be lowered one order of magnitude compared to similar devices

with a high-κ film consisting of HfO2 only. Additionally, with a

virtual source model we are able to... (More)
This paper presents DC and RF characterization as

well as modeling of vertical InAs nanowire MOSFETs with LG =

200 nm and Al2O3/HfO2 high-κ dielectric. Measurements at VDS =

0.5 V show that high transconductance (gm = 1.37 mS/μm), high

drive current (IDS = 1.34 mA/μm), and low on-resistance (RON =

287 Ωμm) can be realized using vertical InAs nanowires on Si

substrates. By measuring the 1/f-noise, the gate area normalized

gate voltage noise spectral density, SVG·LG·WG, is determined to

be lowered one order of magnitude compared to similar devices

with a high-κ film consisting of HfO2 only. Additionally, with a

virtual source model we are able to determine the intrinsic

transport properties. These devices (LG = 200 nm) show a high

injection velocity (vinj = 1.7·107 cm/s) with a performance

degradation for array FETs predominantly due to an increase in

series resistance. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
MOSFET, RF, InAs, Nanowire (NW)
in
IEEE Transactions on Electron Devices
volume
60
issue
9
pages
2761 - 2767
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000323640300009
  • scopus:84883271377
ISSN
0018-9383
DOI
10.1109/TED.2013.2272324
project
EIT_WWW Wireless with Wires
language
English
LU publication?
yes
id
052bca2e-a2c0-466f-b405-b4f149fd0037 (old id 4317006)
alternative location
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6563112
date added to LUP
2014-02-20 12:57:34
date last changed
2019-02-20 05:11:41
@article{052bca2e-a2c0-466f-b405-b4f149fd0037,
  abstract     = {This paper presents DC and RF characterization as<br/><br>
well as modeling of vertical InAs nanowire MOSFETs with LG =<br/><br>
200 nm and Al2O3/HfO2 high-κ dielectric. Measurements at VDS =<br/><br>
0.5 V show that high transconductance (gm = 1.37 mS/μm), high<br/><br>
drive current (IDS = 1.34 mA/μm), and low on-resistance (RON =<br/><br>
287 Ωμm) can be realized using vertical InAs nanowires on Si<br/><br>
substrates. By measuring the 1/f-noise, the gate area normalized<br/><br>
gate voltage noise spectral density, SVG·LG·WG, is determined to<br/><br>
be lowered one order of magnitude compared to similar devices<br/><br>
with a high-κ film consisting of HfO2 only. Additionally, with a<br/><br>
virtual source model we are able to determine the intrinsic<br/><br>
transport properties. These devices (LG = 200 nm) show a high<br/><br>
injection velocity (vinj = 1.7·107 cm/s) with a performance<br/><br>
degradation for array FETs predominantly due to an increase in<br/><br>
series resistance.},
  author       = {Persson, Karl-Magnus and Berg, Martin and Borg, Mattias and Wu, Jun and Johansson, Sofia and Svensson, Johannes and Jansson, Kristofer and Lind, Erik and Wernersson, Lars-Erik},
  issn         = {0018-9383},
  keyword      = {MOSFET,RF,InAs,Nanowire (NW)},
  language     = {eng},
  number       = {9},
  pages        = {2761--2767},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Transactions on Electron Devices},
  title        = {Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates},
  url          = {http://dx.doi.org/10.1109/TED.2013.2272324},
  volume       = {60},
  year         = {2013},
}