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High frequency III-V nanowire MOSFETs

Lind, Erik LU (2016) In Semiconductor Science and Technology 31(9).
Abstract

III-V nanowire transistors are promising candidates for very high frequency electronics applications. The improved electrostatics originating from the gate-all-around geometry allow for more aggressive scaling as compared with planar field-effect transistors, and this can lead to device operation at very high frequencies. The very high mobility possible with In-rich devices can allow very high device performance at low operating voltages. GaN nanowires can take advantage of the large band gap for high voltage operation. In this paper, we review the basic physics and device performance of nanowire field- effect transistors relevant for high frequency performance. First, the geometry of lateral and vertical nanowire field-effect... (More)

III-V nanowire transistors are promising candidates for very high frequency electronics applications. The improved electrostatics originating from the gate-all-around geometry allow for more aggressive scaling as compared with planar field-effect transistors, and this can lead to device operation at very high frequencies. The very high mobility possible with In-rich devices can allow very high device performance at low operating voltages. GaN nanowires can take advantage of the large band gap for high voltage operation. In this paper, we review the basic physics and device performance of nanowire field- effect transistors relevant for high frequency performance. First, the geometry of lateral and vertical nanowire field-effect transistors is introduced, with special emphasis on the parasitic capacitances important for nanowire geometries. The basic important high frequency transistor metrics are introduced. Secondly, the scaling properties of gate-all-around nanowire transistors are introduced, based on geometric length scales, demonstrating the scaling possibilities of nanowire transistors. Thirdly, to model nanowire transistor performance, a two-band non-parabolic ballistic transistor model is used to efficiently calculate the current and transconductance as a function of band gap and nanowire size. The intrinsic RF metrics are also estimated. Finally, experimental state-of-the-art nanowire field-effect transistors are reviewed and benchmarked, lateral and vertical transistor geometries are explored, and different fabrication routes are highlighted. Lateral devices have demonstrated operation up to 350 GHz, and vertical devices up to 155 GHz.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
MOSFET, nanowire, RF
in
Semiconductor Science and Technology
volume
31
issue
9
publisher
IOP Publishing
external identifiers
  • scopus:84988432808
  • wos:000383973600002
ISSN
0268-1242
DOI
10.1088/0268-1242/31/9/093005
language
English
LU publication?
yes
id
7f48841f-50c2-4f15-a64a-b620a18a6643
date added to LUP
2016-12-02 09:01:27
date last changed
2017-09-18 11:32:02
@article{7f48841f-50c2-4f15-a64a-b620a18a6643,
  abstract     = {<p>III-V nanowire transistors are promising candidates for very high frequency electronics applications. The improved electrostatics originating from the gate-all-around geometry allow for more aggressive scaling as compared with planar field-effect transistors, and this can lead to device operation at very high frequencies. The very high mobility possible with In-rich devices can allow very high device performance at low operating voltages. GaN nanowires can take advantage of the large band gap for high voltage operation. In this paper, we review the basic physics and device performance of nanowire field- effect transistors relevant for high frequency performance. First, the geometry of lateral and vertical nanowire field-effect transistors is introduced, with special emphasis on the parasitic capacitances important for nanowire geometries. The basic important high frequency transistor metrics are introduced. Secondly, the scaling properties of gate-all-around nanowire transistors are introduced, based on geometric length scales, demonstrating the scaling possibilities of nanowire transistors. Thirdly, to model nanowire transistor performance, a two-band non-parabolic ballistic transistor model is used to efficiently calculate the current and transconductance as a function of band gap and nanowire size. The intrinsic RF metrics are also estimated. Finally, experimental state-of-the-art nanowire field-effect transistors are reviewed and benchmarked, lateral and vertical transistor geometries are explored, and different fabrication routes are highlighted. Lateral devices have demonstrated operation up to 350 GHz, and vertical devices up to 155 GHz.</p>},
  articleno    = {093005},
  author       = {Lind, Erik},
  issn         = {0268-1242},
  keyword      = {MOSFET,nanowire,RF},
  language     = {eng},
  month        = {08},
  number       = {9},
  publisher    = {IOP Publishing},
  series       = {Semiconductor Science and Technology},
  title        = {High frequency III-V nanowire MOSFETs},
  url          = {http://dx.doi.org/10.1088/0268-1242/31/9/093005},
  volume       = {31},
  year         = {2016},
}