3-D Integrated Track-and-Hold Circuit Using InAs Nanowire MOSFETs and Capacitors
(2016) In IEEE Electron Device Letters 37(7). p.851-854- Abstract
This letter presents a vertical integration scheme where track-and-hold circuits, consisting of a MOSFET in series with a metal-insulator-metal (MIM) capacitor, are successfully fabricated along vertical InAs nanowires. The nanowire MOSFET is used as a switch with varying switch resistance, Rsw, as the gate-source voltage, VGS, is varied. The track-and-hold circuit operation is verified by a sine wave that is properly evaluated by the circuit. In addition, calculations show that the three-dimensional integration reduces the track-and-hold area a factor of 2, as compared with planar MIM capacitor only. With further nanowire pitch reduction, about ten times area saving is projected.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1bddf767-c0b2-4ec9-bb79-f4c5851ab682
- author
- Wu, Jun LU and Wernersson, Lars Erik LU
- organization
- publishing date
- 2016-07-01
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- capacitor, InAs, mixed-signal application, MOSFET, Nanowire, track-and-hold circuit
- in
- IEEE Electron Device Letters
- volume
- 37
- issue
- 7
- article number
- 7478620
- pages
- 4 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- scopus:84976864087
- wos:000379940600008
- ISSN
- 0741-3106
- DOI
- 10.1109/LED.2016.2572188
- language
- English
- LU publication?
- yes
- id
- 1bddf767-c0b2-4ec9-bb79-f4c5851ab682
- date added to LUP
- 2016-07-18 12:27:12
- date last changed
- 2025-01-12 09:01:35
@article{1bddf767-c0b2-4ec9-bb79-f4c5851ab682, abstract = {{<p>This letter presents a vertical integration scheme where track-and-hold circuits, consisting of a MOSFET in series with a metal-insulator-metal (MIM) capacitor, are successfully fabricated along vertical InAs nanowires. The nanowire MOSFET is used as a switch with varying switch resistance, R<sub>sw</sub>, as the gate-source voltage, V<sub>GS</sub>, is varied. The track-and-hold circuit operation is verified by a sine wave that is properly evaluated by the circuit. In addition, calculations show that the three-dimensional integration reduces the track-and-hold area a factor of 2, as compared with planar MIM capacitor only. With further nanowire pitch reduction, about ten times area saving is projected.</p>}}, author = {{Wu, Jun and Wernersson, Lars Erik}}, issn = {{0741-3106}}, keywords = {{capacitor; InAs; mixed-signal application; MOSFET; Nanowire; track-and-hold circuit}}, language = {{eng}}, month = {{07}}, number = {{7}}, pages = {{851--854}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Electron Device Letters}}, title = {{3-D Integrated Track-and-Hold Circuit Using InAs Nanowire MOSFETs and Capacitors}}, url = {{http://dx.doi.org/10.1109/LED.2016.2572188}}, doi = {{10.1109/LED.2016.2572188}}, volume = {{37}}, year = {{2016}}, }