Skip to main content
Record
Title
1/f and RTS noise in InGaAs nanowire MOSFETs
Type
Journal Article
Publ. year
2017
Author/s
Möhle, C.; Zota, C. B.; Hellenbrand, M.; Lind, E.
Department/s
Department of Electrical and Information Technology; NanoLund: Centre for Nanoscience
In LUP since
2017-05-17
Downloads

Total This Year This Month
342 11 0
Downloads per country

United States of America 219 (64%)
China 33 (10%)
Germany 26 (8%)
Sweden 15 (4%)
France 11 (3%)
Taiwan (China) 7 (2%)
United Kingdom of Great Britain and Northern Ireland 4 (1%)
Netherlands (Kingdom of the) 3 (1%)
South Korea 2 (1%)
Japan 2 (1%)
Denmark 2 (1%)
Bulgaria 2 (1%)
Unknown 2 (1%)
Finland 2 (1%)
India 2 (1%)
Ukraine 1 (0%)
Hungary 1 (0%)
Poland 1 (0%)
Ireland 1 (0%)
Hong Kong (China) 1 (0%)
Portugal 1 (0%)
Singapore 1 (0%)
Lithuania 1 (0%)
Senegal 1 (0%)
Switzerland 1 (0%)
About
The download statistics shown here have been collected since the launch of LUP in October 2007 and are updated every night. Statistics are available for all records with open access fulltexts. Efforts have been made to exclude downloads by robots and track irregular download activities.

About accessibility

Disclaimer
The information on downloads per country is based on the geolocation of IP addresses and may not be completely accurate. The statistics presented here may also change retroactively when the calculation process is improved to provide more accurate results.

Statistics Last Updated
Wed Jul 17 08:57:33 2024