1/f and RTS noise in InGaAs nanowire MOSFETs
(2017) Conference on Insulating Films on Semiconductors (INFOS) In Microelectronic Engineering 178. p.52-55- Abstract
Low-frequency noise measurements were performed on high-performance InGaAs nanowire MOSFETs. 1/f noise measurements show number fluctuations, rather than mobility fluctuations, as the dominant noise source. The minimum equivalent input gate voltage noise reported here is 80 μm2μV2/Hz, among the lowest values for III-V FETs, and showing the feasibility of a high-quality, low trap density, high-k gate oxide on InGaAs.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/18f9bf2e-d4f2-4cae-8fb9-826cf0bf2143
- author
- Möhle, C. ; Zota, C. B. LU ; Hellenbrand, M. LU and Lind, E. LU
- organization
- publishing date
- 2017-06-25
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- 1/f noise, Elastic tunneling, InGaAs, MOSFETs, Nanowires, RTS noise
- in
- Microelectronic Engineering
- volume
- 178
- pages
- 52 - 55
- publisher
- Elsevier
- conference name
- Conference on Insulating Films on Semiconductors (INFOS)
- conference location
- Potsdam, Germany
- conference dates
- 2017-06-27 - 2017-06-30
- external identifiers
-
- wos:000404703800013
- scopus:85018346221
- ISSN
- 0167-9317
- DOI
- 10.1016/j.mee.2017.04.038
- language
- English
- LU publication?
- yes
- id
- 18f9bf2e-d4f2-4cae-8fb9-826cf0bf2143
- date added to LUP
- 2017-05-17 09:56:37
- date last changed
- 2024-04-14 10:54:16
@article{18f9bf2e-d4f2-4cae-8fb9-826cf0bf2143,
abstract = {{<p>Low-frequency noise measurements were performed on high-performance InGaAs nanowire MOSFETs. 1/f noise measurements show number fluctuations, rather than mobility fluctuations, as the dominant noise source. The minimum equivalent input gate voltage noise reported here is 80 μm<sup>2</sup>μV<sup>2</sup>/Hz, among the lowest values for III-V FETs, and showing the feasibility of a high-quality, low trap density, high-k gate oxide on InGaAs.</p>}},
author = {{Möhle, C. and Zota, C. B. and Hellenbrand, M. and Lind, E.}},
issn = {{0167-9317}},
keywords = {{1/f noise; Elastic tunneling; InGaAs; MOSFETs; Nanowires; RTS noise}},
language = {{eng}},
month = {{06}},
pages = {{52--55}},
publisher = {{Elsevier}},
series = {{Microelectronic Engineering}},
title = {{1/f and RTS noise in InGaAs nanowire MOSFETs}},
url = {{https://lup.lub.lu.se/search/files/41397994/1f_and_RTS_Noise_in_InGaAs_NW_MOSFETs_clean_LU_upload.pdf}},
doi = {{10.1016/j.mee.2017.04.038}},
volume = {{178}},
year = {{2017}},
}