LUP Statistics
Record
- Title
- Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
- Type
- Conference Abstract
- Publ. year
- 2012
- Author/s
- Persson, Karl-Magnus; Berg, Martin; Borg, Mattias; Wu, Jun et al.
- Department/s
- ELLIIT: the Linköping-Lund initiative on IT and mobile communication; Department of Electrical and Information Technology; Solid State Physics
- In LUP since
- 2016-04-01
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