LUP Statistics
Record
- Title
- 1/f and RTS noise in InGaAs nanowire MOSFETs
- Type
- Journal Article
- Publ. year
- 2017
- Author/s
- Möhle, C.; Zota, C. B.; Hellenbrand, M.; Lind, E.
- Department/s
- Department of Electrical and Information Technology; NanoLund: Centre for Nanoscience
- In LUP since
- 2017-05-17
Downloads
| Total | This Year | This Month |
| 363 | 3 | 0 |
United States of America  |
236 (65%) |
China  |
27 (7%) |
Germany  |
26 (7%) |
Sweden  |
15 (4%) |
France  |
11 (3%) |
Taiwan (China)  |
7 (2%) |
United Kingdom of Great Britain and Northern Ireland  |
4 (1%) |
Netherlands (Kingdom of the)  |
3 (1%) |
Japan  |
3 (1%) |
Unknown  |
3 (1%) |
India  |
3 (1%) |
Bulgaria  |
2 (1%) |
South Korea  |
2 (1%) |
Finland  |
2 (1%) |
Denmark  |
2 (1%) |
Ukraine  |
2 (1%) |
Ireland  |
2 (1%) |
Hong Kong (China)  |
2 (1%) |
Singapore  |
1 (0%) |
Portugal  |
1 (0%) |
Hungary  |
1 (0%) |
Viet Nam  |
1 (0%) |
Italy  |
1 (0%) |
Canada  |
1 (0%) |
Belgium  |
1 (0%) |
Poland  |
1 (0%) |
Lithuania  |
1 (0%) |
Switzerland  |
1 (0%) |
Senegal  |
1 (0%) |