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Development of Ni-based Ohmic contacts to InAs and InGaAs

Cha, Eunjung LU (2013) EITM01 20122
Department of Electrical and Information Technology
Abstract
Low specific contact resistivity (ρc) of alloyed Ni/Pd/Au and nonalloyed Ti/Pd/Au Ohmic contacts to unintentionally doped n-InAs and n+-In0.63Ga0.37As, which is a potential candidate for highly scaled HBTs and MOSFETs, is reported. Contacts were formed by UV-ozone oxidation and oxide removal with 1:1 HCl:DI water, and then deposited by either thermal evaporation or sputtering, followed by annealing. Finally, specific contact resistivities of Ohmic contacts were extracted using the transmission line model (TLM).

The lowest contact resistivity of Ni contacts was 3.02 • 10-8 Ωcm2 to unintentionally doped n-InAs after a 150 ℃ annealing for duration of 1 min, while the lowest contact resistivity of Ti contacts was found to be 3.29 • 10-8... (More)
Low specific contact resistivity (ρc) of alloyed Ni/Pd/Au and nonalloyed Ti/Pd/Au Ohmic contacts to unintentionally doped n-InAs and n+-In0.63Ga0.37As, which is a potential candidate for highly scaled HBTs and MOSFETs, is reported. Contacts were formed by UV-ozone oxidation and oxide removal with 1:1 HCl:DI water, and then deposited by either thermal evaporation or sputtering, followed by annealing. Finally, specific contact resistivities of Ohmic contacts were extracted using the transmission line model (TLM).

The lowest contact resistivity of Ni contacts was 3.02 • 10-8 Ωcm2 to unintentionally doped n-InAs after a 150 ℃ annealing for duration of 1 min, while the lowest contact resistivity of Ti contacts was found to be 3.29 • 10-8 Ωcm2 to n-InAs, annealed at 300 ℃ . This indicates that the alloyed Ni contact exhibited somewhat lower contact resistivity than the nonalloyed Ti contact, but they are comparable. Furthermore, the lowest contact resistivity of all was obtained from the alloyed Ni contact to n-InAs. They have a narrow band gap where the Fermi level pins close to the conduction band, which in turn gives rise to better Ohmic contacts. (Less)
Please use this url to cite or link to this publication:
author
Cha, Eunjung LU
supervisor
organization
course
EITM01 20122
year
type
H2 - Master's Degree (Two Years)
subject
keywords
Ohmic contacts, Ni contacts, Ti contacts, annealing, Transmission Line Model, contact resistivity
language
English
id
3633580
date added to LUP
2013-07-03 13:56:16
date last changed
2013-07-03 13:56:16
@misc{3633580,
  abstract     = {Low specific contact resistivity (ρc) of alloyed Ni/Pd/Au and nonalloyed Ti/Pd/Au Ohmic contacts to unintentionally doped n-InAs and n+-In0.63Ga0.37As, which is a potential candidate for highly scaled HBTs and MOSFETs, is reported. Contacts were formed by UV-ozone oxidation and oxide removal with 1:1 HCl:DI water, and then deposited by either thermal evaporation or sputtering, followed by annealing. Finally, specific contact resistivities of Ohmic contacts were extracted using the transmission line model (TLM).

The lowest contact resistivity of Ni contacts was 3.02 • 10-8 Ωcm2 to unintentionally doped n-InAs after a 150 ℃ annealing for duration of 1 min, while the lowest contact resistivity of Ti contacts was found to be 3.29 • 10-8 Ωcm2 to n-InAs, annealed at 300 ℃ . This indicates that the alloyed Ni contact exhibited somewhat lower contact resistivity than the nonalloyed Ti contact, but they are comparable. Furthermore, the lowest contact resistivity of all was obtained from the alloyed Ni contact to n-InAs. They have a narrow band gap where the Fermi level pins close to the conduction band, which in turn gives rise to better Ohmic contacts.},
  author       = {Cha, Eunjung},
  keyword      = {Ohmic contacts,Ni contacts,Ti contacts,annealing,Transmission Line Model,contact resistivity},
  language     = {eng},
  note         = {Student Paper},
  title        = {Development of Ni-based Ohmic contacts to InAs and InGaAs},
  year         = {2013},
}