Development of Ni-based Ohmic contacts to InAs and InGaAs
(2013) EITM01 20122Department of Electrical and Information Technology
- Abstract
- Low specific contact resistivity (ρc) of alloyed Ni/Pd/Au and nonalloyed Ti/Pd/Au Ohmic contacts to unintentionally doped n-InAs and n+-In0.63Ga0.37As, which is a potential candidate for highly scaled HBTs and MOSFETs, is reported. Contacts were formed by UV-ozone oxidation and oxide removal with 1:1 HCl:DI water, and then deposited by either thermal evaporation or sputtering, followed by annealing. Finally, specific contact resistivities of Ohmic contacts were extracted using the transmission line model (TLM).
The lowest contact resistivity of Ni contacts was 3.02 • 10-8 Ωcm2 to unintentionally doped n-InAs after a 150 ℃ annealing for duration of 1 min, while the lowest contact resistivity of Ti contacts was found to be 3.29 • 10-8... (More) - Low specific contact resistivity (ρc) of alloyed Ni/Pd/Au and nonalloyed Ti/Pd/Au Ohmic contacts to unintentionally doped n-InAs and n+-In0.63Ga0.37As, which is a potential candidate for highly scaled HBTs and MOSFETs, is reported. Contacts were formed by UV-ozone oxidation and oxide removal with 1:1 HCl:DI water, and then deposited by either thermal evaporation or sputtering, followed by annealing. Finally, specific contact resistivities of Ohmic contacts were extracted using the transmission line model (TLM).
The lowest contact resistivity of Ni contacts was 3.02 • 10-8 Ωcm2 to unintentionally doped n-InAs after a 150 ℃ annealing for duration of 1 min, while the lowest contact resistivity of Ti contacts was found to be 3.29 • 10-8 Ωcm2 to n-InAs, annealed at 300 ℃ . This indicates that the alloyed Ni contact exhibited somewhat lower contact resistivity than the nonalloyed Ti contact, but they are comparable. Furthermore, the lowest contact resistivity of all was obtained from the alloyed Ni contact to n-InAs. They have a narrow band gap where the Fermi level pins close to the conduction band, which in turn gives rise to better Ohmic contacts. (Less)
Please use this url to cite or link to this publication:
http://lup.lub.lu.se/student-papers/record/3633580
- author
- Cha, Eunjung LU
- supervisor
-
- Erik Lind LU
- organization
- course
- EITM01 20122
- year
- 2013
- type
- H2 - Master's Degree (Two Years)
- subject
- keywords
- Ohmic contacts, Ni contacts, Ti contacts, annealing, Transmission Line Model, contact resistivity
- language
- English
- id
- 3633580
- date added to LUP
- 2013-07-03 13:56:16
- date last changed
- 2013-07-03 13:56:16
@misc{3633580, abstract = {{Low specific contact resistivity (ρc) of alloyed Ni/Pd/Au and nonalloyed Ti/Pd/Au Ohmic contacts to unintentionally doped n-InAs and n+-In0.63Ga0.37As, which is a potential candidate for highly scaled HBTs and MOSFETs, is reported. Contacts were formed by UV-ozone oxidation and oxide removal with 1:1 HCl:DI water, and then deposited by either thermal evaporation or sputtering, followed by annealing. Finally, specific contact resistivities of Ohmic contacts were extracted using the transmission line model (TLM). The lowest contact resistivity of Ni contacts was 3.02 • 10-8 Ωcm2 to unintentionally doped n-InAs after a 150 ℃ annealing for duration of 1 min, while the lowest contact resistivity of Ti contacts was found to be 3.29 • 10-8 Ωcm2 to n-InAs, annealed at 300 ℃ . This indicates that the alloyed Ni contact exhibited somewhat lower contact resistivity than the nonalloyed Ti contact, but they are comparable. Furthermore, the lowest contact resistivity of all was obtained from the alloyed Ni contact to n-InAs. They have a narrow band gap where the Fermi level pins close to the conduction band, which in turn gives rise to better Ohmic contacts.}}, author = {{Cha, Eunjung}}, language = {{eng}}, note = {{Student Paper}}, title = {{Development of Ni-based Ohmic contacts to InAs and InGaAs}}, year = {{2013}}, }