Skip to main content

LUP Student Papers

LUND UNIVERSITY LIBRARIES

NANOIMPRINT LITHOGRAPHY APPLICATIONS OF METAL ASSISTED CHEMICAL ETCHING OF SILICON

Tarequzzaman, Mohammad LU (2013) FYSM60 20131
Department of Physics
Abstract
This work describes the Nanoimprint lithography (NIL) applications of metal assisted chemical etching (MaCE) of silicon. One of the main goals of this project is to fabricate NIL stamp using IPS/STU NIL technique in combination with metal assisted chemical etching (MaCE) of Si process.

The IPS/STU NIL technique has been used to form Au nanostructures for performing MaCE process. Electron beam lithography (EBL) has also been applied to form different sizes of Au nanostructures on Si and to study resolution limit of MaCE process. During the work, a gold mesh array deposition technique (reverse lift-off process) for NIL is demonstrated for MaCE process applications.

The etching depth, etching rate and surface morphology of Si after MaCE... (More)
This work describes the Nanoimprint lithography (NIL) applications of metal assisted chemical etching (MaCE) of silicon. One of the main goals of this project is to fabricate NIL stamp using IPS/STU NIL technique in combination with metal assisted chemical etching (MaCE) of Si process.

The IPS/STU NIL technique has been used to form Au nanostructures for performing MaCE process. Electron beam lithography (EBL) has also been applied to form different sizes of Au nanostructures on Si and to study resolution limit of MaCE process. During the work, a gold mesh array deposition technique (reverse lift-off process) for NIL is demonstrated for MaCE process applications.

The etching depth, etching rate and surface morphology of Si after MaCE process is measured as a function of time and concentration of chemicals. For the measurement, analysis and characterization, optical microscope, ellipsometer, scanning electron microscope (SEM) and atomic force microscope (AFM) are used. The result shows that IPS/STU NIL and MaCE process can be used for fabricating Nanoimprint stamps. (Less)
Please use this url to cite or link to this publication:
author
Tarequzzaman, Mohammad LU
supervisor
organization
course
FYSM60 20131
year
type
H2 - Master's Degree (Two Years)
subject
keywords
Nanoimprint lithography, Metal-assisted chemical etching, Silicon etching, Stamp fabrication, Nanofabrication
language
English
id
3801334
date added to LUP
2013-05-29 22:45:30
date last changed
2013-05-29 22:45:30
@misc{3801334,
  abstract     = {This work describes the Nanoimprint lithography (NIL) applications of metal assisted chemical etching (MaCE) of silicon. One of the main goals of this project is to fabricate NIL stamp using IPS/STU NIL technique in combination with metal assisted chemical etching (MaCE) of Si process.

The IPS/STU NIL technique has been used to form Au nanostructures for performing MaCE process. Electron beam lithography (EBL) has also been applied to form different sizes of Au nanostructures on Si and to study resolution limit of MaCE process. During the work, a gold mesh array deposition technique (reverse lift-off process) for NIL is demonstrated for MaCE process applications.

The etching depth, etching rate and surface morphology of Si after MaCE process is measured as a function of time and concentration of chemicals. For the measurement, analysis and characterization, optical microscope, ellipsometer, scanning electron microscope (SEM) and atomic force microscope (AFM) are used. The result shows that IPS/STU NIL and MaCE process can be used for fabricating Nanoimprint stamps.},
  author       = {Tarequzzaman, Mohammad},
  keyword      = {Nanoimprint lithography,Metal-assisted chemical etching,Silicon etching,Stamp fabrication,Nanofabrication},
  language     = {eng},
  note         = {Student Paper},
  title        = {NANOIMPRINT LITHOGRAPHY APPLICATIONS OF METAL ASSISTED CHEMICAL ETCHING OF SILICON},
  year         = {2013},
}