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Effects of electron beam irradiation on the electrical properties of III-V semiconductor nanowires

Sepehri, Sobhan LU (2013) FYSM60 20131
Department of Physics
Abstract
Scanning electron microscopy is widely used in nanowire device fabrication. In spite of the attractive high resolution that scanning electron microscopy provides, it influences the electrical properties of III-V nanowires. Influence of electron beam irradiation on InAs, InSb and GaSb nanowires is investigated by fabricating field effect transistors using the heavily doped Si substrate as gate. It is found that due to modification of surface states upon electron beam irradiation of the nanowires, the electrical conductances of n-type (InAs and InSb) and p-type nanowires (GaSb) are affected. The effects are interpreted as exodiffusion of oxygen ions and detachment of ionic adsorbents by the high energy electron beam, which result in... (More)
Scanning electron microscopy is widely used in nanowire device fabrication. In spite of the attractive high resolution that scanning electron microscopy provides, it influences the electrical properties of III-V nanowires. Influence of electron beam irradiation on InAs, InSb and GaSb nanowires is investigated by fabricating field effect transistors using the heavily doped Si substrate as gate. It is found that due to modification of surface states upon electron beam irradiation of the nanowires, the electrical conductances of n-type (InAs and InSb) and p-type nanowires (GaSb) are affected. The effects are interpreted as exodiffusion of oxygen ions and detachment of ionic adsorbents by the high energy electron beam, which result in conduction enhancement of InAs and InSb nanowires and degradation of conductance in GaSb nanowires. Results suggest that irradiation of nanowires with acceleration voltage between 5 and 20 kV and electron dose higher than 260 $\mu Ccm^{-2}$ has the potential to locally modulate charge carriers in nanowires and affect their electrical characteristics. (Less)
Please use this url to cite or link to this publication:
author
Sepehri, Sobhan LU
supervisor
organization
course
FYSM60 20131
year
type
H2 - Master's Degree (Two Years)
subject
keywords
Nanowires, electrical transport, electron beam irradiation, carrier modulation
language
English
id
3914578
date added to LUP
2013-07-09 00:31:44
date last changed
2013-07-09 00:31:44
@misc{3914578,
  abstract     = {Scanning electron microscopy is widely used in nanowire device fabrication. In spite of the attractive high resolution that scanning electron microscopy provides, it influences the electrical properties of III-V nanowires. Influence of electron beam irradiation on InAs, InSb and GaSb nanowires is investigated by fabricating field effect transistors using the heavily doped Si substrate as gate. It is found that due to modification of surface states upon electron beam irradiation of the nanowires, the electrical conductances of n-type (InAs and InSb) and p-type nanowires (GaSb) are affected. The effects are interpreted as exodiffusion of oxygen ions and detachment of ionic adsorbents by the high energy electron beam, which result in conduction enhancement of InAs and InSb nanowires and degradation of conductance in GaSb nanowires. Results suggest that irradiation of nanowires with acceleration voltage between 5 and 20 kV and electron dose higher than 260 $\mu Ccm^{-2}$ has the potential to locally modulate charge carriers in nanowires and affect their electrical characteristics.},
  author       = {Sepehri, Sobhan},
  keyword      = {Nanowires,electrical transport,electron beam irradiation,carrier modulation},
  language     = {eng},
  note         = {Student Paper},
  title        = {Effects of electron beam irradiation on the electrical properties of III-V semiconductor nanowires},
  year         = {2013},
}