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Development of All Dry Nanoimprint Lift-Off Process for Growth of Nanowires

Aberi, Yasna LU (2014) FYSM31 20132
Department of Physics
Solid State Physics
Abstract
In this project, nanoimprint lithography has been applied to define gold particles on the surface of an InP wafer. For achieving this aim, a dry etching process has been developed to create resist undercut for the lift-off. In order to prepare the required undercuts, RIE parameters were optimized and desired undercuts were made at etch times of 80 s to 120 s. Also, to obtain anisotropy and high etch selectivity, etch rate test of a best combination of polymer layer materials was investigated. Lift-off was realized and gold particles were deposited on predefined position on imprinted surface.
Gold-seeded InP nanowires have been grown using metal-organic vapour phase epitaxy. Characterization by scanning electron microscope after growth... (More)
In this project, nanoimprint lithography has been applied to define gold particles on the surface of an InP wafer. For achieving this aim, a dry etching process has been developed to create resist undercut for the lift-off. In order to prepare the required undercuts, RIE parameters were optimized and desired undercuts were made at etch times of 80 s to 120 s. Also, to obtain anisotropy and high etch selectivity, etch rate test of a best combination of polymer layer materials was investigated. Lift-off was realized and gold particles were deposited on predefined position on imprinted surface.
Gold-seeded InP nanowires have been grown using metal-organic vapour phase epitaxy. Characterization by scanning electron microscope after growth demonstrated the high tendency of gold particles to move during epitaxial growth. Gold particles were merged together on the surface due to the presences of InP oxide induced by O2 plasma used in dry etching. Wet chemical treatment by using diluted HF and HCl solutions was applied to remove the InP oxide on the surface. The influence of wet chemical treatment to reduce the merging of gold particles and to improve the growth of nanowires was investigated. It was indicated that nanowires grew much better on the surface treated by a diluted HF solution. On the HF treated surface the smallest number of gold particles merged together resulting in nearly uniform InP nanowires grown on controlled position. The distribution of grown nanowires as diameter versus amount was plotted as a histogram and the behavior of nanowires grown was studied. (Less)
Please use this url to cite or link to this publication:
author
Aberi, Yasna LU
supervisor
organization
course
FYSM31 20132
year
type
H2 - Master's Degree (Two Years)
subject
language
English
id
4229427
date added to LUP
2014-01-14 16:09:14
date last changed
2014-10-22 10:23:33
@misc{4229427,
  abstract     = {{In this project, nanoimprint lithography has been applied to define gold particles on the surface of an InP wafer. For achieving this aim, a dry etching process has been developed to create resist undercut for the lift-off. In order to prepare the required undercuts, RIE parameters were optimized and desired undercuts were made at etch times of 80 s to 120 s. Also, to obtain anisotropy and high etch selectivity, etch rate test of a best combination of polymer layer materials was investigated. Lift-off was realized and gold particles were deposited on predefined position on imprinted surface. 
Gold-seeded InP nanowires have been grown using metal-organic vapour phase epitaxy. Characterization by scanning electron microscope after growth demonstrated the high tendency of gold particles to move during epitaxial growth. Gold particles were merged together on the surface due to the presences of InP oxide induced by O2 plasma used in dry etching. Wet chemical treatment by using diluted HF and HCl solutions was applied to remove the InP oxide on the surface. The influence of wet chemical treatment to reduce the merging of gold particles and to improve the growth of nanowires was investigated. It was indicated that nanowires grew much better on the surface treated by a diluted HF solution. On the HF treated surface the smallest number of gold particles merged together resulting in nearly uniform InP nanowires grown on controlled position. The distribution of grown nanowires as diameter versus amount was plotted as a histogram and the behavior of nanowires grown was studied.}},
  author       = {{Aberi, Yasna}},
  language     = {{eng}},
  note         = {{Student Paper}},
  title        = {{Development of All Dry Nanoimprint Lift-Off Process for Growth of Nanowires}},
  year         = {{2014}},
}