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Atomic Layer Deposition Parameter Optimization

Aberi, Yasna LU (2014) FYSM15 20141
Department of Physics
Solid State Physics
Abstract
Al2O3 and SiO2 films were synthesized using Atomic Layer Deposition (ALD) at low temperature of 250 °C. Thermal ALD Al2O3 using Al (CH3)3 [trimethylaluminum (TMAl)] and H2O as precursors and plasma ALD Al2O3 using Al (CH3)3 [trimethylaluminum (TMAl)] and O2 plasma as precursor and oxidant, respectively. To grow SiO2 films Bis (diethylamido) silane as Si precursor and O2 plasma as oxidant were used. The growth process was characterized using ellipsometry. GPC (growth per cycle) of ~ 1.1 Å was obtained in thermal and plasma ALD process to reach a self-limiting ALD growth. A refractive index of 1.65 and 1.45 were indicated for Al2O3 and SiO2 films, respectively. The results demonstrated an efficient ALD process with an excellent controlled... (More)
Al2O3 and SiO2 films were synthesized using Atomic Layer Deposition (ALD) at low temperature of 250 °C. Thermal ALD Al2O3 using Al (CH3)3 [trimethylaluminum (TMAl)] and H2O as precursors and plasma ALD Al2O3 using Al (CH3)3 [trimethylaluminum (TMAl)] and O2 plasma as precursor and oxidant, respectively. To grow SiO2 films Bis (diethylamido) silane as Si precursor and O2 plasma as oxidant were used. The growth process was characterized using ellipsometry. GPC (growth per cycle) of ~ 1.1 Å was obtained in thermal and plasma ALD process to reach a self-limiting ALD growth. A refractive index of 1.65 and 1.45 were indicated for Al2O3 and SiO2 films, respectively. The results demonstrated an efficient ALD process with an excellent controlled thickness of films. An optimized recipe of the ALD process over the original recipes was obtained which corresponds well with similar experiments in literature. (Less)
Please use this url to cite or link to this publication:
author
Aberi, Yasna LU
supervisor
organization
course
FYSM15 20141
year
type
H1 - Master's Degree (One Year)
subject
language
English
id
4436567
date added to LUP
2014-05-09 13:17:57
date last changed
2014-10-22 10:10:59
@misc{4436567,
  abstract     = {{Al2O3 and SiO2 films were synthesized using Atomic Layer Deposition (ALD) at low temperature of 250 °C. Thermal ALD Al2O3 using Al (CH3)3 [trimethylaluminum (TMAl)] and H2O as precursors and plasma ALD Al2O3 using Al (CH3)3 [trimethylaluminum (TMAl)] and O2 plasma as precursor and oxidant, respectively. To grow SiO2 films Bis (diethylamido) silane as Si precursor and O2 plasma as oxidant were used. The growth process was characterized using ellipsometry. GPC (growth per cycle) of ~ 1.1 Å was obtained in thermal and plasma ALD process to reach a self-limiting ALD growth. A refractive index of 1.65 and 1.45 were indicated for Al2O3 and SiO2 films, respectively. The results demonstrated an efficient ALD process with an excellent controlled thickness of films. An optimized recipe of the ALD process over the original recipes was obtained which corresponds well with similar experiments in literature.}},
  author       = {{Aberi, Yasna}},
  language     = {{eng}},
  note         = {{Student Paper}},
  title        = {{Atomic Layer Deposition Parameter Optimization}},
  year         = {{2014}},
}