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Growth and Characterization of GaSb Nanowires by In-situ MOVPE Formed Tin Catalyst

Tornberg, Marcus LU (2015) PHYM01 20142
Solid State Physics
Department of Physics
Abstract
Lately, epitaxial growth of nanowires catalysed by alternative seed particles has become an interesting field, as gold is considered to be a problematic material for the silicon-based electronics industry. This thesis focuses on in-situ MOVPE growth of tin seeded GaSb nanowires, both the effect of V/III-ratio and substrates are investigated. GaSb nanowires have been successfully grown on a GaAs stem as well as directly on the GaAs substrate or GaSb layer. The {111} directed nanowires were analysed in scanning and transmission electron microscopes, which revealed small segments of diagonal, {111}, planar defects for most of the structures. Change in antimony flow, i.e. V/III-ratio, resulted in variations of the morphology and number of... (More)
Lately, epitaxial growth of nanowires catalysed by alternative seed particles has become an interesting field, as gold is considered to be a problematic material for the silicon-based electronics industry. This thesis focuses on in-situ MOVPE growth of tin seeded GaSb nanowires, both the effect of V/III-ratio and substrates are investigated. GaSb nanowires have been successfully grown on a GaAs stem as well as directly on the GaAs substrate or GaSb layer. The {111} directed nanowires were analysed in scanning and transmission electron microscopes, which revealed small segments of diagonal, {111}, planar defects for most of the structures. Change in antimony flow, i.e. V/III-ratio, resulted in variations of the morphology and number of planar defects. Growth from tin particles on GaSb layer seemed more favourable compared to the GaAs substrate, as the nanowires grew faster than on the GaAs surface. It is strongly believed that tin acts as a dopant during growth and affects the structure as the material of the seed may migrate during growth. (Less)
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author
Tornberg, Marcus LU
supervisor
organization
course
PHYM01 20142
year
type
H2 - Master's Degree (Two Years)
subject
keywords
MOVPE, GaSb, GaAs, Sn-nanoparticle, Nanowire
language
English
id
5471107
date added to LUP
2015-06-17 15:20:12
date last changed
2015-06-18 14:04:26
@misc{5471107,
  abstract     = {Lately, epitaxial growth of nanowires catalysed by alternative seed particles has become an interesting field, as gold is considered to be a problematic material for the silicon-based electronics industry. This thesis focuses on in-situ MOVPE growth of tin seeded GaSb nanowires, both the effect of V/III-ratio and substrates are investigated. GaSb nanowires have been successfully grown on a GaAs stem as well as directly on the GaAs substrate or GaSb layer. The {111} directed nanowires were analysed in scanning and transmission electron microscopes, which revealed small segments of diagonal, {111}, planar defects for most of the structures. Change in antimony flow, i.e. V/III-ratio, resulted in variations of the morphology and number of planar defects. Growth from tin particles on GaSb layer seemed more favourable compared to the GaAs substrate, as the nanowires grew faster than on the GaAs surface. It is strongly believed that tin acts as a dopant during growth and affects the structure as the material of the seed may migrate during growth.},
  author       = {Tornberg, Marcus},
  keyword      = {MOVPE,GaSb,GaAs,Sn-nanoparticle,Nanowire},
  language     = {eng},
  note         = {Student Paper},
  title        = {Growth and Characterization of GaSb Nanowires by In-situ MOVPE Formed Tin Catalyst},
  year         = {2015},
}