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Modelling of Electron Transport in Thermoelectric Devices based on Semiconductor Heterostructures

Courteaut, Klara LU (2016) FYSK02 20152
Department of Physics
Mathematical Physics
Abstract
The electron transmission probability in semiconductor heterostructures made of potential barriers whose height, width and separation are modified to follow different Gaussian functions are calculated using the transfer matrix theory. These structures then serve as electron obstacles in thermoelectric devices in order to increase the output power and efficiency. When computing and comparing these two measures of performance in each case, it is found that barriers with Gaussian heights are most suitable for devices used at room temperatures, while barriers with Gaussian widths and constant separation perform best at cold temperatures. The impact of the number of barriers of the semiconductor heterostructure and the variance of the Gaussian... (More)
The electron transmission probability in semiconductor heterostructures made of potential barriers whose height, width and separation are modified to follow different Gaussian functions are calculated using the transfer matrix theory. These structures then serve as electron obstacles in thermoelectric devices in order to increase the output power and efficiency. When computing and comparing these two measures of performance in each case, it is found that barriers with Gaussian heights are most suitable for devices used at room temperatures, while barriers with Gaussian widths and constant separation perform best at cold temperatures. The impact of the number of barriers of the semiconductor heterostructure and the variance of the Gaussian is studied for the two most promising types of structures by calculating the maximum power and corresponding efficiency. (Less)
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author
Courteaut, Klara LU
supervisor
organization
course
FYSK02 20152
year
type
M2 - Bachelor Degree
subject
keywords
Transfer matrix, Superlattices, Nanotechnology, Electron transport, Heterostructures, Thermoelectrics
language
English
id
8598739
date added to LUP
2016-02-05 08:43:23
date last changed
2016-02-05 08:43:23
@misc{8598739,
  abstract     = {The electron transmission probability in semiconductor heterostructures made of potential barriers whose height, width and separation are modified to follow different Gaussian functions are calculated using the transfer matrix theory. These structures then serve as electron obstacles in thermoelectric devices in order to increase the output power and efficiency. When computing and comparing these two measures of performance in each case, it is found that barriers with Gaussian heights are most suitable for devices used at room temperatures, while barriers with Gaussian widths and constant separation perform best at cold temperatures. The impact of the number of barriers of the semiconductor heterostructure and the variance of the Gaussian is studied for the two most promising types of structures by calculating the maximum power and corresponding efficiency.},
  author       = {Courteaut, Klara},
  keyword      = {Transfer matrix,Superlattices,Nanotechnology,Electron transport,Heterostructures,Thermoelectrics},
  language     = {eng},
  note         = {Student Paper},
  title        = {Modelling of Electron Transport in Thermoelectric Devices based on Semiconductor Heterostructures},
  year         = {2016},
}