Modelling of Electron Transport in Thermoelectric Devices based on Semiconductor Heterostructures
(2016) FYSK02 20152Department of Physics
Mathematical Physics
 Abstract
 The electron transmission probability in semiconductor heterostructures made of potential barriers whose height, width and separation are modified to follow different Gaussian functions are calculated using the transfer matrix theory. These structures then serve as electron obstacles in thermoelectric devices in order to increase the output power and efficiency. When computing and comparing these two measures of performance in each case, it is found that barriers with Gaussian heights are most suitable for devices used at room temperatures, while barriers with Gaussian widths and constant separation perform best at cold temperatures. The impact of the number of barriers of the semiconductor heterostructure and the variance of the Gaussian... (More)
 The electron transmission probability in semiconductor heterostructures made of potential barriers whose height, width and separation are modified to follow different Gaussian functions are calculated using the transfer matrix theory. These structures then serve as electron obstacles in thermoelectric devices in order to increase the output power and efficiency. When computing and comparing these two measures of performance in each case, it is found that barriers with Gaussian heights are most suitable for devices used at room temperatures, while barriers with Gaussian widths and constant separation perform best at cold temperatures. The impact of the number of barriers of the semiconductor heterostructure and the variance of the Gaussian is studied for the two most promising types of structures by calculating the maximum power and corresponding efficiency. (Less)
Please use this url to cite or link to this publication:
http://lup.lub.lu.se/studentpapers/record/8598739
 author
 Courteaut, Klara ^{LU}
 supervisor

 Andreas Wacker ^{LU}
 organization
 course
 FYSK02 20152
 year
 2016
 type
 M2  Bachelor Degree
 subject
 keywords
 Transfer matrix, Superlattices, Nanotechnology, Electron transport, Heterostructures, Thermoelectrics
 language
 English
 id
 8598739
 date added to LUP
 20160205 08:43:23
 date last changed
 20160205 08:43:23
@misc{8598739, abstract = {The electron transmission probability in semiconductor heterostructures made of potential barriers whose height, width and separation are modified to follow different Gaussian functions are calculated using the transfer matrix theory. These structures then serve as electron obstacles in thermoelectric devices in order to increase the output power and efficiency. When computing and comparing these two measures of performance in each case, it is found that barriers with Gaussian heights are most suitable for devices used at room temperatures, while barriers with Gaussian widths and constant separation perform best at cold temperatures. The impact of the number of barriers of the semiconductor heterostructure and the variance of the Gaussian is studied for the two most promising types of structures by calculating the maximum power and corresponding efficiency.}, author = {Courteaut, Klara}, keyword = {Transfer matrix,Superlattices,Nanotechnology,Electron transport,Heterostructures,Thermoelectrics}, language = {eng}, note = {Student Paper}, title = {Modelling of Electron Transport in Thermoelectric Devices based on Semiconductor Heterostructures}, year = {2016}, }