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Study of nucleation and growth of Sn-seeded GaSb nanowires

Niu, Jie LU (2016) FYSM60 20161
Department of Physics
Solid State Physics
Abstract
GaSb semiconducting nanowires attract significant attention due to their potential application as quantum devices, single-hole transistors and solar cells. However, the synthesis of high-quality nanowires is quite complex and needs further investigation. In this project the growth mechanism of Sn-seeded GaSb nanowires on {111}A GaSb substrates is studied. Nanowires grown by metal-organic vapor phase epitaxy (MOVPE) were sampled at different growth times (from 75 s to 1200 s) and temperatures (510°C and 550°C). The focused ion beam (FIB) technique was selected to prepare electron-transparent transmission electron microscope (TEM) samples with cross-sectional views of nanowires and substrates. By means of various characterization methods... (More)
GaSb semiconducting nanowires attract significant attention due to their potential application as quantum devices, single-hole transistors and solar cells. However, the synthesis of high-quality nanowires is quite complex and needs further investigation. In this project the growth mechanism of Sn-seeded GaSb nanowires on {111}A GaSb substrates is studied. Nanowires grown by metal-organic vapor phase epitaxy (MOVPE) were sampled at different growth times (from 75 s to 1200 s) and temperatures (510°C and 550°C). The focused ion beam (FIB) technique was selected to prepare electron-transparent transmission electron microscope (TEM) samples with cross-sectional views of nanowires and substrates. By means of various characterization methods (e.g. SEM, BF/DF TEM, HRTEM, HAADF-STEM and EDX), the growth mechanism of the nanowires was studied. The zinc blende (ZB) crystal structure and the twin boundaries were identified. In addition, the structural differences among the vertical, non-vertical and kinked nanowires are discussed. (Less)
Popular Abstract
In the 1980s, an amazing material, known as nanoscale material, was born in the world. The size of this material is very small. If we assume a sesame seed is as large as a stadium, a nano-particle can be seen as a sesame seed in this stadium. Due to the small size, it has many amazing properties that differ from bulk materials. For instance, bulk copper can conduct electricity while nano-copper is an insulator; ceramic is fragile whereas nano-ceramic can be bent at room temperature. The nanowire is a nanostructure with a diameter in the order of a nanometer, defined in one-dimension because of its relatively speaking larger length compared to its diameter. This kind of low-dimension design also disrupts the classical rules and has... (More)
In the 1980s, an amazing material, known as nanoscale material, was born in the world. The size of this material is very small. If we assume a sesame seed is as large as a stadium, a nano-particle can be seen as a sesame seed in this stadium. Due to the small size, it has many amazing properties that differ from bulk materials. For instance, bulk copper can conduct electricity while nano-copper is an insulator; ceramic is fragile whereas nano-ceramic can be bent at room temperature. The nanowire is a nanostructure with a diameter in the order of a nanometer, defined in one-dimension because of its relatively speaking larger length compared to its diameter. This kind of low-dimension design also disrupts the classical rules and has fantastic potentials.
Among nanometer materials, semiconducting material, especially semiconductor nanowire attract attention due to their unique applications in electronics and optics. However, before using this magic material, firstly we need to grow it with desired shape and number. The synthesis of different types of nanowires is complex and various. GaSb nanowires with different shapes are observed under the same growth condition. The work in this thesis studies the growth mechanism of GaSb nanowire. This investigation is helpful in controlling the growth of this kind of nanowire and for further applications in the study of nucleation of other materials. (Less)
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author
Niu, Jie LU
supervisor
organization
course
FYSM60 20161
year
type
H2 - Master's Degree (Two Years)
subject
keywords
GaSb nanowires, focused ion beam, transmission electron microscopy
language
English
id
8882118
date added to LUP
2016-06-20 13:57:20
date last changed
2016-06-20 13:57:20
@misc{8882118,
  abstract     = {GaSb semiconducting nanowires attract significant attention due to their potential application as quantum devices, single-hole transistors and solar cells. However, the synthesis of high-quality nanowires is quite complex and needs further investigation. In this project the growth mechanism of Sn-seeded GaSb nanowires on {111}A GaSb substrates is studied. Nanowires grown by metal-organic vapor phase epitaxy (MOVPE) were sampled at different growth times (from 75 s to 1200 s) and temperatures (510°C and 550°C). The focused ion beam (FIB) technique was selected to prepare electron-transparent transmission electron microscope (TEM) samples with cross-sectional views of nanowires and substrates. By means of various characterization methods (e.g. SEM, BF/DF TEM, HRTEM, HAADF-STEM and EDX), the growth mechanism of the nanowires was studied. The zinc blende (ZB) crystal structure and the twin boundaries were identified. In addition, the structural differences among the vertical, non-vertical and kinked nanowires are discussed.},
  author       = {Niu, Jie},
  keyword      = {GaSb nanowires,focused ion beam,transmission electron microscopy},
  language     = {eng},
  note         = {Student Paper},
  title        = {Study of nucleation and growth of Sn-seeded GaSb nanowires},
  year         = {2016},
}