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InAs(1-x)Sb(x) Branches on Wurtzite and Zincblende InAs Nanowires

Dahl, Magnus LU (2017) PHYM01 20162
Solid State Physics
Department of Physics
Abstract
Here we demonstrate that InAs1-xSbx branches grown on InAs trunks partially adopt the wurtzite crystal structure when grown on wurtzite InAs, and found signs of a hard limit for how much Sb can be incorporated in a wurtzite structure. Antimonide nanowires have a narrow growth parameter window, and binary antimonide compounds have a strong preference for the zincblende crystal structure. Previous studies have shown that it is possible to grow binary antimonide nanowires in the wurtzite structure, but for ternaries the structure changes from wurtzite to zincblende when adding a very small amount of Sb. We have attempted to force the
InAs1-xSbx branches to adopt the wurtzite structure by growing them from secondary seed particles deposited... (More)
Here we demonstrate that InAs1-xSbx branches grown on InAs trunks partially adopt the wurtzite crystal structure when grown on wurtzite InAs, and found signs of a hard limit for how much Sb can be incorporated in a wurtzite structure. Antimonide nanowires have a narrow growth parameter window, and binary antimonide compounds have a strong preference for the zincblende crystal structure. Previous studies have shown that it is possible to grow binary antimonide nanowires in the wurtzite structure, but for ternaries the structure changes from wurtzite to zincblende when adding a very small amount of Sb. We have attempted to force the
InAs1-xSbx branches to adopt the wurtzite structure by growing them from secondary seed particles deposited on wurtzite InAs nanowires. Branch growth was done on both zincblende and wurtzite nanowires of different diameters, with varying ratio of group V precursors and V/III ratio. Our results show that the Sb solid composition in the branches is tuneable by varying the studied growth parameters, which is of interest for the development of branched nanowire infrared sensors. (Less)
Popular Abstract
Here we demonstrate that InAs1-xSbx branches grown on InAs trunks partially adopt the wurtzite crystal structure when grown on wurtzite InAs, and found signs of a hard limit for how much Sb can be incorporated in a wurtzite structure. Antimonide nanowires have a narrow growth parameter window, and binary antimonide compounds have a strong preference for the zincblende crystal structure. Previous studies have shown that it is possible to grow binary antimonide nanowires in the wurtzite structure, but for ternaries the structure changes from wurtzite to zincblende when adding a very small amount of Sb. We have attempted to force the
InAs1-xSbx branches to adopt the wurtzite structure by growing them from
secondary seed particles deposited... (More)
Here we demonstrate that InAs1-xSbx branches grown on InAs trunks partially adopt the wurtzite crystal structure when grown on wurtzite InAs, and found signs of a hard limit for how much Sb can be incorporated in a wurtzite structure. Antimonide nanowires have a narrow growth parameter window, and binary antimonide compounds have a strong preference for the zincblende crystal structure. Previous studies have shown that it is possible to grow binary antimonide nanowires in the wurtzite structure, but for ternaries the structure changes from wurtzite to zincblende when adding a very small amount of Sb. We have attempted to force the
InAs1-xSbx branches to adopt the wurtzite structure by growing them from
secondary seed particles deposited on wurtzite InAs nanowires. Branch growth was done on both zincblende and wurtzite nanowires of different diameters, with varying ratio of group V precursors and V/III ratio. Our results show that the Sb solid composition in the branches is tuneable by varying the studied growth parameters, which is of interest for the development of branched nanowire infrared sensors. (Less)
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author
Dahl, Magnus LU
supervisor
organization
course
PHYM01 20162
year
type
H2 - Master's Degree (Two Years)
subject
language
English
id
8903555
date added to LUP
2017-02-23 09:23:58
date last changed
2017-02-23 09:23:58
@misc{8903555,
  abstract     = {Here we demonstrate that InAs1-xSbx branches grown on InAs trunks partially adopt the wurtzite crystal structure when grown on wurtzite InAs, and found signs of a hard limit for how much Sb can be incorporated in a wurtzite structure. Antimonide nanowires have a narrow growth parameter window, and binary antimonide compounds have a strong preference for the zincblende crystal structure. Previous studies have shown that it is possible to grow binary antimonide nanowires in the wurtzite structure, but for ternaries the structure changes from wurtzite to zincblende when adding a very small amount of Sb. We have attempted to force the
InAs1-xSbx branches to adopt the wurtzite structure by growing them from secondary seed particles deposited on wurtzite InAs nanowires. Branch growth was done on both zincblende and wurtzite nanowires of different diameters, with varying ratio of group V precursors and V/III ratio. Our results show that the Sb solid composition in the branches is tuneable by varying the studied growth parameters, which is of interest for the development of branched nanowire infrared sensors.},
  author       = {Dahl, Magnus},
  language     = {eng},
  note         = {Student Paper},
  title        = {InAs(1-x)Sb(x) Branches on Wurtzite and Zincblende InAs Nanowires},
  year         = {2017},
}