Modelling Rapid Melt Growth of III-V Integration on Si
(2017) FYSK02 20171Department of Physics
Solid State Physics
- Abstract
- High quality III-V semiconductors on silicon substrate can make for significant progress in gate electrostatics and optoelectronic devices. Indium antimonide with its inviting properties can play a key role to further facilitate devise integration. But the question is, is it possible to obtain high quality III-V semiconductors on low cost silicon and still be able to manufacture it at large scale? The answer is yes! With the technique "Rapid Melt Growth" defect free lattice mismatch materials can be produced on large scale. The resulting material is free of crystallographic defects and is high in purity. To be able to use rapid melt growth to produce high quality single crystalline material, the thermodynamic parameters for nucleation and... (More)
- High quality III-V semiconductors on silicon substrate can make for significant progress in gate electrostatics and optoelectronic devices. Indium antimonide with its inviting properties can play a key role to further facilitate devise integration. But the question is, is it possible to obtain high quality III-V semiconductors on low cost silicon and still be able to manufacture it at large scale? The answer is yes! With the technique "Rapid Melt Growth" defect free lattice mismatch materials can be produced on large scale. The resulting material is free of crystallographic defects and is high in purity. To be able to use rapid melt growth to produce high quality single crystalline material, the thermodynamic parameters for nucleation and growth velocity needs to be known. The problem arises when these parameters cannot readily be found in literature and require long term experiments. In this thesis, the thermodynamic parameters are found from relevant equations and assumptions based on literature. Using these parameters, a temperature window of 108 K was found, which is large enough and hence leads to long epitaxial length before random nucleation dominates. This length was found to be 2.61 mm, which is good enough for most device fabrication. The results can be applied for materials having similar properties to Indium antimonide. Nonetheless changing some of the parameters further improved the results for nucleation and growth i.e. in the future those parameters need to be reconsidered. (Less)
- Popular Abstract
- High quality III-V semiconductors on silicon substrate can make substantial progress in electronic industry. InSb with its inviting properties can further facilitate the devise integration. But does there exist a technique that can produce high quality material channel on low cost silicon at a large scale? The answer is yes! Rapid melt growth is a promising technique to grow defect free material. The material is less tampered and is high in purity. This technique is seen to be a major step towards rational growth of micrometer structure for devise integration of many electronics and optoelectronics.
Rapid melt growth takes nucleation theory and growth velocity into account. To be able to use rapid melt growth, the epitaxial growth... (More) - High quality III-V semiconductors on silicon substrate can make substantial progress in electronic industry. InSb with its inviting properties can further facilitate the devise integration. But does there exist a technique that can produce high quality material channel on low cost silicon at a large scale? The answer is yes! Rapid melt growth is a promising technique to grow defect free material. The material is less tampered and is high in purity. This technique is seen to be a major step towards rational growth of micrometer structure for devise integration of many electronics and optoelectronics.
Rapid melt growth takes nucleation theory and growth velocity into account. To be able to use rapid melt growth, the epitaxial growth seeded by silicon should travel long enough distance before it is obstructed by random nucleation. Rapid melt growth necessitates the thermodynamic parameters to be known, but these parameters are not readily available in literature. In this project, they are calculated from relevant equations and assumptions from literature to help us find temperature window, and single crystal length of InSb before nucleation becomes dominant over the epitaxial growth.
There are two types of nucleation, homogeneous nucleation that takes place away from the surface and heterogeneous that occurs at the surface of the system. Epitaxial growth is a process of attaching atoms to previously existing crystal. The results for nucleation and growth velocity can be plotted as a function of temperature, and the results for single crystal length can be plotted as a function of cooling rate. The results by rapid melt growth confirmed the presence of a temperature window. The epitaxial growth traveled for a distance of 2.61 mm before it was interrupted by random nucleation. This length, depending on the application, can allow quality devise integration. Rapid melt growth of InSb can be applied to other potential channel material that have similar temperature dependence of growth velocity and nucleation. Although some parameters are questioned for their reliability here, the important thermodynamic parameters were analyzed to help us design experiments in the future. (Less)
Please use this url to cite or link to this publication:
http://lup.lub.lu.se/student-papers/record/8923645
- author
- Baneen, Zahra LU
- supervisor
-
- Mattias Borg LU
- Jonas Johansson LU
- organization
- course
- FYSK02 20171
- year
- 2017
- type
- M2 - Bachelor Degree
- subject
- keywords
- Semiconductors, Rapid Melt Growth, Parameters, nucleation, growth velocity, cooling rate
- language
- English
- id
- 8923645
- date added to LUP
- 2017-09-21 14:38:26
- date last changed
- 2017-09-21 14:38:26
@misc{8923645,
abstract = {{High quality III-V semiconductors on silicon substrate can make for significant progress in gate electrostatics and optoelectronic devices. Indium antimonide with its inviting properties can play a key role to further facilitate devise integration. But the question is, is it possible to obtain high quality III-V semiconductors on low cost silicon and still be able to manufacture it at large scale? The answer is yes! With the technique "Rapid Melt Growth" defect free lattice mismatch materials can be produced on large scale. The resulting material is free of crystallographic defects and is high in purity. To be able to use rapid melt growth to produce high quality single crystalline material, the thermodynamic parameters for nucleation and growth velocity needs to be known. The problem arises when these parameters cannot readily be found in literature and require long term experiments. In this thesis, the thermodynamic parameters are found from relevant equations and assumptions based on literature. Using these parameters, a temperature window of 108 K was found, which is large enough and hence leads to long epitaxial length before random nucleation dominates. This length was found to be 2.61 mm, which is good enough for most device fabrication. The results can be applied for materials having similar properties to Indium antimonide. Nonetheless changing some of the parameters further improved the results for nucleation and growth i.e. in the future those parameters need to be reconsidered.}},
author = {{Baneen, Zahra}},
language = {{eng}},
note = {{Student Paper}},
title = {{Modelling Rapid Melt Growth of III-V Integration on Si}},
year = {{2017}},
}