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Electrical Characterization of GaN Device Structures and Coalesced Films

Ibrahimagic, Dino LU (2017) PHYM01 20161
Solid State Physics
Department of Physics
Abstract
Wide band gap semiconductors such as gallium nitride (GaN) are attractive candidates for short wavelength optoelectronic devices and high-power/high-temperature electronics. Widespread commercial adoption has been hindered by great difficulties encountered in obtaining high-quality materials. No suitable substrate material is available, making lattice matching unattainable and resulting in high threading dislocation densities. These dislocations produce overall performance degradation and reduces lifetime of electronic devices.

A novel approach to growing dislocation-free GaN flattops and coalesced films has been developed at Lund University. The electrical properties have been investigated using Four-probe, Hall effect and Circular... (More)
Wide band gap semiconductors such as gallium nitride (GaN) are attractive candidates for short wavelength optoelectronic devices and high-power/high-temperature electronics. Widespread commercial adoption has been hindered by great difficulties encountered in obtaining high-quality materials. No suitable substrate material is available, making lattice matching unattainable and resulting in high threading dislocation densities. These dislocations produce overall performance degradation and reduces lifetime of electronic devices.

A novel approach to growing dislocation-free GaN flattops and coalesced films has been developed at Lund University. The electrical properties have been investigated using Four-probe, Hall effect and Circular Transmission Line Measurement. The resistance and carrier concentration are found to correlate well between different measurement methods. Measurements on platelets suggest that further growth optimization is needed as the intended device doping has not been achieved. Regions that are intended to be undoped display higher carrier concentrations than expected. The opposite is true for regions with intended doping that seem to be undoped. Coalesced samples demonstrated a large variation in leakage between different samples with further research being necessary to determine the cause. (Less)
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author
Ibrahimagic, Dino LU
supervisor
organization
course
PHYM01 20161
year
type
H2 - Master's Degree (Two Years)
subject
keywords
Gallium Nitride, GaN, defect-free, flattops, Hall effect, TLM
language
English
id
8929051
date added to LUP
2017-12-18 16:54:00
date last changed
2017-12-18 16:54:00
@misc{8929051,
  abstract     = {Wide band gap semiconductors such as gallium nitride (GaN) are attractive candidates for short wavelength optoelectronic devices and high-power/high-temperature electronics. Widespread commercial adoption has been hindered by great difficulties encountered in obtaining high-quality materials. No suitable substrate material is available, making lattice matching unattainable and resulting in high threading dislocation densities. These dislocations produce overall performance degradation and reduces lifetime of electronic devices. 

A novel approach to growing dislocation-free GaN flattops and coalesced films has been developed at Lund University. The electrical properties have been investigated using Four-probe, Hall effect and Circular Transmission Line Measurement. The resistance and carrier concentration are found to correlate well between different measurement methods. Measurements on platelets suggest that further growth optimization is needed as the intended device doping has not been achieved. Regions that are intended to be undoped display higher carrier concentrations than expected. The opposite is true for regions with intended doping that seem to be undoped. Coalesced samples demonstrated a large variation in leakage between different samples with further research being necessary to determine the cause.},
  author       = {Ibrahimagic, Dino},
  keyword      = {Gallium Nitride,GaN,defect-free,flattops,Hall effect,TLM},
  language     = {eng},
  note         = {Student Paper},
  title        = {Electrical Characterization of GaN Device Structures and Coalesced Films},
  year         = {2017},
}