Electrical Characterization of GaN Device Structures and Coalesced Films
(2017) PHYM01 20161Solid State Physics
Department of Physics
- Abstract
- Wide band gap semiconductors such as gallium nitride (GaN) are attractive candidates for short wavelength optoelectronic devices and high-power/high-temperature electronics. Widespread commercial adoption has been hindered by great difficulties encountered in obtaining high-quality materials. No suitable substrate material is available, making lattice matching unattainable and resulting in high threading dislocation densities. These dislocations produce overall performance degradation and reduces lifetime of electronic devices.
A novel approach to growing dislocation-free GaN flattops and coalesced films has been developed at Lund University. The electrical properties have been investigated using Four-probe, Hall effect and Circular... (More) - Wide band gap semiconductors such as gallium nitride (GaN) are attractive candidates for short wavelength optoelectronic devices and high-power/high-temperature electronics. Widespread commercial adoption has been hindered by great difficulties encountered in obtaining high-quality materials. No suitable substrate material is available, making lattice matching unattainable and resulting in high threading dislocation densities. These dislocations produce overall performance degradation and reduces lifetime of electronic devices.
A novel approach to growing dislocation-free GaN flattops and coalesced films has been developed at Lund University. The electrical properties have been investigated using Four-probe, Hall effect and Circular Transmission Line Measurement. The resistance and carrier concentration are found to correlate well between different measurement methods. Measurements on platelets suggest that further growth optimization is needed as the intended device doping has not been achieved. Regions that are intended to be undoped display higher carrier concentrations than expected. The opposite is true for regions with intended doping that seem to be undoped. Coalesced samples demonstrated a large variation in leakage between different samples with further research being necessary to determine the cause. (Less)
Please use this url to cite or link to this publication:
http://lup.lub.lu.se/student-papers/record/8929051
- author
- Ibrahimagic, Dino LU
- supervisor
-
- Jonas Ohlsson LU
- Olof Hultin LU
- Kristian Storm LU
- organization
- course
- PHYM01 20161
- year
- 2017
- type
- H2 - Master's Degree (Two Years)
- subject
- keywords
- Gallium Nitride, GaN, defect-free, flattops, Hall effect, TLM
- language
- English
- id
- 8929051
- date added to LUP
- 2017-12-18 16:54:00
- date last changed
- 2017-12-18 16:54:00
@misc{8929051, abstract = {{Wide band gap semiconductors such as gallium nitride (GaN) are attractive candidates for short wavelength optoelectronic devices and high-power/high-temperature electronics. Widespread commercial adoption has been hindered by great difficulties encountered in obtaining high-quality materials. No suitable substrate material is available, making lattice matching unattainable and resulting in high threading dislocation densities. These dislocations produce overall performance degradation and reduces lifetime of electronic devices. A novel approach to growing dislocation-free GaN flattops and coalesced films has been developed at Lund University. The electrical properties have been investigated using Four-probe, Hall effect and Circular Transmission Line Measurement. The resistance and carrier concentration are found to correlate well between different measurement methods. Measurements on platelets suggest that further growth optimization is needed as the intended device doping has not been achieved. Regions that are intended to be undoped display higher carrier concentrations than expected. The opposite is true for regions with intended doping that seem to be undoped. Coalesced samples demonstrated a large variation in leakage between different samples with further research being necessary to determine the cause.}}, author = {{Ibrahimagic, Dino}}, language = {{eng}}, note = {{Student Paper}}, title = {{Electrical Characterization of GaN Device Structures and Coalesced Films}}, year = {{2017}}, }