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Spatial control of electron & hole states in InAs/GaSb heterostructures

Vennberg, Felix LU (2018) FYSM60 20181
Solid State Physics
Department of Physics
Abstract (Swedish)
Single nanowire transistors employing three separately controlled electrostatic gates were fabricated to investigate band gap modulation in InAs-GaSb heterostructures. The aim is to show hybridization between electron and hole states over the heterojunction. Electric and thermoelectric characterization at low temperatures suggests that transport can be tuned from electrons in InAs to holes GaSb and that the relative band alignment can be altered from an inverted to a small effective gap. The band gap modulation is speculated to be caused by quantum confinement induced by the gates.
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author
Vennberg, Felix LU
supervisor
organization
course
FYSM60 20181
year
type
H2 - Master's Degree (Two Years)
subject
keywords
InAs, GaSb, Nanowires, ambipolar, heterostructures, III-V
language
English
id
8941896
date added to LUP
2018-05-23 16:54:11
date last changed
2018-05-23 16:54:11
@misc{8941896,
  abstract     = {{Single nanowire transistors employing three separately controlled electrostatic gates were fabricated to investigate band gap modulation in InAs-GaSb heterostructures. The aim is to show hybridization between electron and hole states over the heterojunction. Electric and thermoelectric characterization at low temperatures suggests that transport can be tuned from electrons in InAs to holes GaSb and that the relative band alignment can be altered from an inverted to a small effective gap. The band gap modulation is speculated to be caused by quantum confinement induced by the gates.}},
  author       = {{Vennberg, Felix}},
  language     = {{eng}},
  note         = {{Student Paper}},
  title        = {{Spatial control of electron & hole states in InAs/GaSb heterostructures}},
  year         = {{2018}},
}