Spatial control of electron & hole states in InAs/GaSb heterostructures
(2018) FYSM60 20181Solid State Physics
Department of Physics
- Abstract (Swedish)
- Single nanowire transistors employing three separately controlled electrostatic gates were fabricated to investigate band gap modulation in InAs-GaSb heterostructures. The aim is to show hybridization between electron and hole states over the heterojunction. Electric and thermoelectric characterization at low temperatures suggests that transport can be tuned from electrons in InAs to holes GaSb and that the relative band alignment can be altered from an inverted to a small effective gap. The band gap modulation is speculated to be caused by quantum confinement induced by the gates.
Please use this url to cite or link to this publication:
http://lup.lub.lu.se/student-papers/record/8941896
- author
- Vennberg, Felix LU
- supervisor
-
- Claes Thelander LU
- I-Ju Chen LU
- organization
- course
- FYSM60 20181
- year
- 2018
- type
- H2 - Master's Degree (Two Years)
- subject
- keywords
- InAs, GaSb, Nanowires, ambipolar, heterostructures, III-V
- language
- English
- id
- 8941896
- date added to LUP
- 2018-05-23 16:54:11
- date last changed
- 2018-05-23 16:54:11
@misc{8941896, abstract = {{Single nanowire transistors employing three separately controlled electrostatic gates were fabricated to investigate band gap modulation in InAs-GaSb heterostructures. The aim is to show hybridization between electron and hole states over the heterojunction. Electric and thermoelectric characterization at low temperatures suggests that transport can be tuned from electrons in InAs to holes GaSb and that the relative band alignment can be altered from an inverted to a small effective gap. The band gap modulation is speculated to be caused by quantum confinement induced by the gates.}}, author = {{Vennberg, Felix}}, language = {{eng}}, note = {{Student Paper}}, title = {{Spatial control of electron & hole states in InAs/GaSb heterostructures}}, year = {{2018}}, }