E-Band Transmitter Design 71G - 86GHz
(2023) EITM02 20231Department of Electrical and Information Technology
- Abstract
- The goal of Master`s thesis is to design a power amplifier as part of a transmitter operating at 71-86GHz
using the 22nm technology. The primary objective is to design a narrowband power amplifier for E-band
at 80GHz. The output power range is 14-20dBm power added efficiency around 14% - 18%. The additional
aim is investigating what new circuit concepts need to be used at 80GHz compared to 40GHz, designing
the power amplifier and potentially also modulator, keeping the efficiency high enough.
Though the majority of IEEE publications refer to the Doherty amplifier because of the sufficient efficiency
as the result of the power combining techniques. The additional area of interest is to observe the difference
between 40GHz and... (More) - The goal of Master`s thesis is to design a power amplifier as part of a transmitter operating at 71-86GHz
using the 22nm technology. The primary objective is to design a narrowband power amplifier for E-band
at 80GHz. The output power range is 14-20dBm power added efficiency around 14% - 18%. The additional
aim is investigating what new circuit concepts need to be used at 80GHz compared to 40GHz, designing
the power amplifier and potentially also modulator, keeping the efficiency high enough.
Though the majority of IEEE publications refer to the Doherty amplifier because of the sufficient efficiency
as the result of the power combining techniques. The additional area of interest is to observe the difference
between 40GHz and 80GHz amplifiers. Therefore, the amplifier for 80GHz has the same approach as for
40GHz - the stacked case.
The output stage is the main concern because of it deals with the high amount of both input and output
powers. The size of transistors and components become vast to withstand high amount of power, which
forces tradeoffs between operation, efficiency, size and solutions.
The numerous problems are introduced by the influence of frequency dependent components, including
non-linearity, power dissipation, and component size. These influences become more visible with
increasing operating frequency.
The research indicates that, while utilizing the identical structure, the schematic cases of the PA for 40GHz
and 80GHz differ considerably.
Firstly, the load line approach helps to determine the minimum number of transistors and it is not well
applicable due to higher loses at 80GHz (e.g. parasitics impact, transconductance, reflection)
Secondly, in order to minimise the signal power loss and make the transistor structure suitable for PDK
inductors, the default versions of the transistor structure are rebuilt with the purpose of purposely changing
capacitive and resistive parasitics.
Thirdly, the inductance presence in gates and ground nets have an influence on the overall performance is
sensitive to its size.
Fourthly, the Q factor of components like capacitors and inductors should be greater than 17 and the Q
factor of nets on the path of signal (e.g. between components) should be at least 10 and higher.
A schematic PA is used in the PA design process, and layout extractions are used to replace components
one at a time for the post-layout simulation. Customised transistors, a cascade, EMX-extracted nets (Vdd,
Vss, back gate nets, between transistors and components), EMX-extracted designed capacitors, an output
MN, and RF pads are all included in the PA configuration.
However, the required efficiency could not be obtained due to high current, which causes large dc power
and low voltage swing with phase shift in relation to each other. (Less) - Popular Abstract
- Though the majority of IEEE publications refer to the Doherty amplifier because of the sufficient efficiency
as the result of the power combining techniques. The additional area of interest is to observe the difference
between 40GHz and 80GHz amplifiers. Therefore, the amplifier for 80GHz has the same approach as for
40GHz - the stacked case.
The output stage is the main concern because of it deals with the high amount of both input and output
powers. The size of transistors and components become vast to withstand high amount of power, which
forces tradeoffs between operation, efficiency, size and solutions.
The numerous problems are introduced by the influence of frequency dependent components, including
non-linearity, power... (More) - Though the majority of IEEE publications refer to the Doherty amplifier because of the sufficient efficiency
as the result of the power combining techniques. The additional area of interest is to observe the difference
between 40GHz and 80GHz amplifiers. Therefore, the amplifier for 80GHz has the same approach as for
40GHz - the stacked case.
The output stage is the main concern because of it deals with the high amount of both input and output
powers. The size of transistors and components become vast to withstand high amount of power, which
forces tradeoffs between operation, efficiency, size and solutions.
The numerous problems are introduced by the influence of frequency dependent components, including
non-linearity, power dissipation, and component size. These influences become more visible with
increasing operating frequency. (Less)
Please use this url to cite or link to this publication:
http://lup.lub.lu.se/student-papers/record/9150009
- author
- Anufrijev, Andrei LU
- supervisor
- organization
- alternative title
- Power Amplifier Design at 80GHz
- course
- EITM02 20231
- year
- 2023
- type
- H2 - Master's Degree (Two Years)
- subject
- keywords
- E band, Power Amplifier, 80GHz, Stacked PA
- report number
- LU/LTH-EIT 2024-967
- language
- English
- id
- 9150009
- date added to LUP
- 2024-03-20 14:28:07
- date last changed
- 2024-03-20 14:28:07
@misc{9150009, abstract = {{The goal of Master`s thesis is to design a power amplifier as part of a transmitter operating at 71-86GHz using the 22nm technology. The primary objective is to design a narrowband power amplifier for E-band at 80GHz. The output power range is 14-20dBm power added efficiency around 14% - 18%. The additional aim is investigating what new circuit concepts need to be used at 80GHz compared to 40GHz, designing the power amplifier and potentially also modulator, keeping the efficiency high enough. Though the majority of IEEE publications refer to the Doherty amplifier because of the sufficient efficiency as the result of the power combining techniques. The additional area of interest is to observe the difference between 40GHz and 80GHz amplifiers. Therefore, the amplifier for 80GHz has the same approach as for 40GHz - the stacked case. The output stage is the main concern because of it deals with the high amount of both input and output powers. The size of transistors and components become vast to withstand high amount of power, which forces tradeoffs between operation, efficiency, size and solutions. The numerous problems are introduced by the influence of frequency dependent components, including non-linearity, power dissipation, and component size. These influences become more visible with increasing operating frequency. The research indicates that, while utilizing the identical structure, the schematic cases of the PA for 40GHz and 80GHz differ considerably. Firstly, the load line approach helps to determine the minimum number of transistors and it is not well applicable due to higher loses at 80GHz (e.g. parasitics impact, transconductance, reflection) Secondly, in order to minimise the signal power loss and make the transistor structure suitable for PDK inductors, the default versions of the transistor structure are rebuilt with the purpose of purposely changing capacitive and resistive parasitics. Thirdly, the inductance presence in gates and ground nets have an influence on the overall performance is sensitive to its size. Fourthly, the Q factor of components like capacitors and inductors should be greater than 17 and the Q factor of nets on the path of signal (e.g. between components) should be at least 10 and higher. A schematic PA is used in the PA design process, and layout extractions are used to replace components one at a time for the post-layout simulation. Customised transistors, a cascade, EMX-extracted nets (Vdd, Vss, back gate nets, between transistors and components), EMX-extracted designed capacitors, an output MN, and RF pads are all included in the PA configuration. However, the required efficiency could not be obtained due to high current, which causes large dc power and low voltage swing with phase shift in relation to each other.}}, author = {{Anufrijev, Andrei}}, language = {{eng}}, note = {{Student Paper}}, title = {{E-Band Transmitter Design 71G - 86GHz}}, year = {{2023}}, }