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- 2020
-
Mark
AlP sacrificial layer for GaP NW growth
- Master (Two yrs)
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Mark
Design of Two 28 GHz Doherty Power Amplifier Topologies with Vertical In(Ga)As Nanowire Transistors
- Master (Two yrs)
- 2019
-
Mark
Finite element modelling of strained nanowire heterostructures
- Bach. Degree
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Mark
Evaluation of light scattering and absorption in aerosol nanowires
- Bach. Degree
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Mark
Optical studies of wrapgated InP nanowires
- Master (Two yrs)
- 2018
-
Mark
Growth of InAsSb and GaAsSb Nanowires
- Master (Two yrs)
-
Mark
Using gallium nitride nanowires as STM probes
- Bach. Degree
- 2017
-
Mark
Fabrication and Charaterisation of Finger Gates
- Master (Two yrs)
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Mark
Simulation and TLM studies of vertical nanowire devices
- Master (One yr)
-
Mark
GaSb nanowire transistors with process induced strain
- Master (Two yrs)