Electro-optical Characterization of Semiconductor Nanowire Devices
(2012) FYSM31 20112Department of Physics
Solid State Physics
- Abstract
- Degradation of properties of semiconductor devices when layers of different materials are grown on top of each other is a common issue if their lattices are mismatched. Strain between them is reduced by creating defects like vacancies. This problem can be solved by growing structures, called nanowires, where stress is reduced radially. It is one of many reasons why it became a very interesting subject of investigation. We have used a Fourier transform spectrometer, a flexible instrument with high spectral resolution to investigate single InP nanowires with different doping, where no blue shift corresponding to state filling effect was observed, and the electro-optical properties of GaSb/InAsSb/InAs far infrared photodetectors. Also,... (More)
- Degradation of properties of semiconductor devices when layers of different materials are grown on top of each other is a common issue if their lattices are mismatched. Strain between them is reduced by creating defects like vacancies. This problem can be solved by growing structures, called nanowires, where stress is reduced radially. It is one of many reasons why it became a very interesting subject of investigation. We have used a Fourier transform spectrometer, a flexible instrument with high spectral resolution to investigate single InP nanowires with different doping, where no blue shift corresponding to state filling effect was observed, and the electro-optical properties of GaSb/InAsSb/InAs far infrared photodetectors. Also, electroluminescence of InP nanowire based light emitting diodes with a radial InP/InAsP/InP quantum well was studied. Broad spectrum, due to a non-uniform width of the quantum well, with two peaks at 1.46 eV and 1.57 eV was measured. (Less)
Please use this url to cite or link to this publication:
http://lup.lub.lu.se/student-papers/record/2296049
- author
- Vainorius, Neimantas LU
- supervisor
-
- Dan Hessman LU
- organization
- course
- FYSM31 20112
- year
- 2012
- type
- L3 - Miscellaneous, Projetcs etc.
- subject
- keywords
- Nanowire, InP LED, differently doped InP FETs, GaSb/InAsSb/InAs photodetectors, Fourier transform spectroscopy.
- language
- English
- id
- 2296049
- date added to LUP
- 2012-01-25 17:16:43
- date last changed
- 2012-11-12 22:45:02
@misc{2296049, abstract = {{Degradation of properties of semiconductor devices when layers of different materials are grown on top of each other is a common issue if their lattices are mismatched. Strain between them is reduced by creating defects like vacancies. This problem can be solved by growing structures, called nanowires, where stress is reduced radially. It is one of many reasons why it became a very interesting subject of investigation. We have used a Fourier transform spectrometer, a flexible instrument with high spectral resolution to investigate single InP nanowires with different doping, where no blue shift corresponding to state filling effect was observed, and the electro-optical properties of GaSb/InAsSb/InAs far infrared photodetectors. Also, electroluminescence of InP nanowire based light emitting diodes with a radial InP/InAsP/InP quantum well was studied. Broad spectrum, due to a non-uniform width of the quantum well, with two peaks at 1.46 eV and 1.57 eV was measured.}}, author = {{Vainorius, Neimantas}}, language = {{eng}}, note = {{Student Paper}}, title = {{Electro-optical Characterization of Semiconductor Nanowire Devices}}, year = {{2012}}, }