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Propagation losses in BaTiO3-based waveguides on silicon

Eltes, Felix LU (2015) KOO920 20142
Centre for Analysis and Synthesis
Abstract
Integrated silicon photonics is emerging as the most promising route for interconnects and on-chip com-
munication to keep up with the constant performance increase of CMOS (complementary metal oxide
semiconductor) technology. Among the components of integrated photonics, the electro-optic modulators
implemented on silicon are suffering from high insertion losses and high power consumption. Due to
its strong electro-optic response, barium titanate (BTO) is an attractive candidate material for a Pockels
modulator. Active devices utilizing the EO effect in BTO have been demonstrated showing that it
can be used for EO modulation in silicon photonics. [3,4] However, the demonstrated devices suffer from
high optical propagation losses... (More)
Integrated silicon photonics is emerging as the most promising route for interconnects and on-chip com-
munication to keep up with the constant performance increase of CMOS (complementary metal oxide
semiconductor) technology. Among the components of integrated photonics, the electro-optic modulators
implemented on silicon are suffering from high insertion losses and high power consumption. Due to
its strong electro-optic response, barium titanate (BTO) is an attractive candidate material for a Pockels
modulator. Active devices utilizing the EO effect in BTO have been demonstrated showing that it
can be used for EO modulation in silicon photonics. [3,4] However, the demonstrated devices suffer from
high optical propagation losses (44 dB/cm), which limits the performance compared to state of the
art silicon photonics devices (< 5 dB/cm). In this work, the effects of molecular beam epitaxy (MBE)
growth conditions and processing techniques on optical propagation losses are investigated. Hydrogen
silsesquioxane (HSQ) strip-loaded waveguides on as-grown BTO films on SOI showed no significant ab-
sorption (<3 dB/cm) at a wavelength of 1550 nm. Various processing and growth parameters were also
investigated, showing no effect on the propagation losses. However, the propagation losses increased to
∼20 dB/cm when fabricating slot-waveguide structures. Such structures are required to enhance the
optical confinement in the BTO layer in active devices. Through systematic investigation, the increase
in propagation losses could be attributed to absorption in the BTO layer, induced by the reducing at-
mosphere during the integration of the top silicon. Post-deposition annealing in oxygen was shown to
reduce the induced absorption losses to 5 dB/cm, comparable to current silicon photonics technology. (Less)
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author
Eltes, Felix LU
supervisor
organization
course
KOO920 20142
year
type
H2 - Master's Degree (Two Years)
subject
keywords
silicon photonics, barium titanate, propagation losses, Pockels effect, hydrogenation, materials chemistry
language
English
id
7357683
date added to LUP
2024-02-28 13:34:32
date last changed
2024-02-28 13:34:32
@misc{7357683,
  abstract     = {{Integrated silicon photonics is emerging as the most promising route for interconnects and on-chip com-
munication to keep up with the constant performance increase of CMOS (complementary metal oxide
semiconductor) technology. Among the components of integrated photonics, the electro-optic modulators
implemented on silicon are suffering from high insertion losses and high power consumption. Due to
its strong electro-optic response, barium titanate (BTO) is an attractive candidate material for a Pockels
modulator. Active devices utilizing the EO effect in BTO have been demonstrated showing that it
can be used for EO modulation in silicon photonics. [3,4] However, the demonstrated devices suffer from
high optical propagation losses (44 dB/cm), which limits the performance compared to state of the
art silicon photonics devices (< 5 dB/cm). In this work, the effects of molecular beam epitaxy (MBE)
growth conditions and processing techniques on optical propagation losses are investigated. Hydrogen
silsesquioxane (HSQ) strip-loaded waveguides on as-grown BTO films on SOI showed no significant ab-
sorption (<3 dB/cm) at a wavelength of 1550 nm. Various processing and growth parameters were also
investigated, showing no effect on the propagation losses. However, the propagation losses increased to
∼20 dB/cm when fabricating slot-waveguide structures. Such structures are required to enhance the
optical confinement in the BTO layer in active devices. Through systematic investigation, the increase
in propagation losses could be attributed to absorption in the BTO layer, induced by the reducing at-
mosphere during the integration of the top silicon. Post-deposition annealing in oxygen was shown to
reduce the induced absorption losses to 5 dB/cm, comparable to current silicon photonics technology.}},
  author       = {{Eltes, Felix}},
  language     = {{eng}},
  note         = {{Student Paper}},
  title        = {{Propagation losses in BaTiO3-based waveguides on silicon}},
  year         = {{2015}},
}