Characterization of Bi-incorporated InSb(111)A/B Surfaces : An STM and XPS Study
(2023) FYSM60 20231Synchrotron Radiation Research
Department of Physics
- Abstract
- In recent years, III-V semiconductor materials have received increasing attention due to their admirable electronic properties like direct tunable bandgaps and high charge carrier mobility. Indium Antimonide (InSb) possesses the largest electron mobility among III-V materials and is promising for infrared detectors, high-speed field effect transistors, and spintronics. Incorporation of bismuth (Bi) into III-V semiconductors can enhance spin-orbit coupling and reduce the band gap. To modify III-V semiconductors with the desired electronic properties and eventually allow industrial fabrication, there are a few challenges to overcome. One is to understand surface modifications.
In this study, the surface properties of InSb(111)A/B with Bi... (More) - In recent years, III-V semiconductor materials have received increasing attention due to their admirable electronic properties like direct tunable bandgaps and high charge carrier mobility. Indium Antimonide (InSb) possesses the largest electron mobility among III-V materials and is promising for infrared detectors, high-speed field effect transistors, and spintronics. Incorporation of bismuth (Bi) into III-V semiconductors can enhance spin-orbit coupling and reduce the band gap. To modify III-V semiconductors with the desired electronic properties and eventually allow industrial fabrication, there are a few challenges to overcome. One is to understand surface modifications.
In this study, the surface properties of InSb(111)A/B with Bi incorporation are investigated with highly surface-sensitive characterization techniques of scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). Clean InSb(111)A and InSb(111)B surfaces exhibit (2×2) and (3×3) reconstructions, respectively. After the Bi deposition, the surfaces display amorphous Bi aggregations. An Sb-Bi bonding configuration is found on the Bi-deposited surface, followed by a Bi-Bi component corresponding to a metallic Bi layer. The Bi spectra of a sequence of deposition and annealing steps are discussed. (Less) - Popular Abstract
- Make Semiconductors Better by Adding Bismuth
Have you wondered what is inside our everyday electronic devices? Computers and cell phones, all consist of a lot of elementary electronics, like diodes and triodes. Consider a device as a building, then diodes and triodes are like walls. Let’s understand deeper to know what the bricks are. Diodes and triodes are manufactured by semiconductors, whose electronic properties could determine the performance of electronic devices, just like how essential the bricks are to a building. Currently silicon is the most common “brick” type.
III-V semiconductor materials have many better properties than silicon, such as high electron mobility which determines how fast the electronics can work. Among... (More) - Make Semiconductors Better by Adding Bismuth
Have you wondered what is inside our everyday electronic devices? Computers and cell phones, all consist of a lot of elementary electronics, like diodes and triodes. Consider a device as a building, then diodes and triodes are like walls. Let’s understand deeper to know what the bricks are. Diodes and triodes are manufactured by semiconductors, whose electronic properties could determine the performance of electronic devices, just like how essential the bricks are to a building. Currently silicon is the most common “brick” type.
III-V semiconductor materials have many better properties than silicon, such as high electron mobility which determines how fast the electronics can work. Among all III-V semiconductor materials, indium antimonide (InSb) has the largest electron mobility and it is exactly the material we study here. However, the properties need to be modified in order to fulfill the need of applications. One trick to do this is adding bismuth (Bi) onto the surface of InSb. Bi can make a difference to the original InSb surface structure and thus act like a magic potion to improve the properties and even lead to novel properties. Therefore, it is crucial to know what is happening on the Bi-incorporated InSb surface.
The aim of this project is to investigate how atoms are arranged on the surface, and which of them are bonded to each other. This study helps to understand the most fundamental issues and can support creating better "bricks" for electronic devices. Here in this research, we evaporate the bismuth atoms and blow them onto the surface of InSb. Then Bi atoms stack and grow on the InSb surface and make a difference. Then we study the surface properties with cutting-edge characterization methods.
We find that Sb atoms on the surface are bonded to the added Bi atoms and study the surface structures. This study can help to improve the performance of infrared detectors, high-speed field effect transistors, spintronics, and topological superconducting quantum devices.
In the future, we can investigate the process more thoroughly to see the Sb-Bi structure. What’s more, we can do Bi deposition on InSb nanoplates and nanowires. In addition, we can introduce more characterization methods, as well as computational simulations. (Less)
Please use this url to cite or link to this publication:
http://lup.lub.lu.se/student-papers/record/9139733
- author
- Huang, Shengpeng LU
- supervisor
-
- Rainer Timm LU
- Rohit Yadav LU
- organization
- course
- FYSM60 20231
- year
- 2023
- type
- H2 - Master's Degree (Two Years)
- subject
- keywords
- indium antimonide, surface reconstructions, bismuth deposition, scanning tunneling microscopy, X-ray photoelectron spectroscopy.
- language
- English
- id
- 9139733
- date added to LUP
- 2023-10-09 09:16:42
- date last changed
- 2023-10-09 09:16:42
@misc{9139733, abstract = {{In recent years, III-V semiconductor materials have received increasing attention due to their admirable electronic properties like direct tunable bandgaps and high charge carrier mobility. Indium Antimonide (InSb) possesses the largest electron mobility among III-V materials and is promising for infrared detectors, high-speed field effect transistors, and spintronics. Incorporation of bismuth (Bi) into III-V semiconductors can enhance spin-orbit coupling and reduce the band gap. To modify III-V semiconductors with the desired electronic properties and eventually allow industrial fabrication, there are a few challenges to overcome. One is to understand surface modifications. In this study, the surface properties of InSb(111)A/B with Bi incorporation are investigated with highly surface-sensitive characterization techniques of scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). Clean InSb(111)A and InSb(111)B surfaces exhibit (2×2) and (3×3) reconstructions, respectively. After the Bi deposition, the surfaces display amorphous Bi aggregations. An Sb-Bi bonding configuration is found on the Bi-deposited surface, followed by a Bi-Bi component corresponding to a metallic Bi layer. The Bi spectra of a sequence of deposition and annealing steps are discussed.}}, author = {{Huang, Shengpeng}}, language = {{eng}}, note = {{Student Paper}}, title = {{Characterization of Bi-incorporated InSb(111)A/B Surfaces : An STM and XPS Study}}, year = {{2023}}, }