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Electro-optical Characterization of Semiconductor Nanowire Devices

Vainorius, Neimantas LU (2012) FYSM31 20112
Department of Physics
Solid State Physics
Abstract
Degradation of properties of semiconductor devices when layers of different materials are grown on top of each other is a common issue if their lattices are mismatched. Strain between them is reduced by creating defects like vacancies. This problem can be solved by growing structures, called nanowires, where stress is reduced radially. It is one of many reasons why it became a very interesting subject of investigation. We have used a Fourier transform spectrometer, a flexible instrument with high spectral resolution to investigate single InP nanowires with different doping, where no blue shift corresponding to state filling effect was observed, and the electro-optical properties of GaSb/InAsSb/InAs far infrared photodetectors. Also,... (More)
Degradation of properties of semiconductor devices when layers of different materials are grown on top of each other is a common issue if their lattices are mismatched. Strain between them is reduced by creating defects like vacancies. This problem can be solved by growing structures, called nanowires, where stress is reduced radially. It is one of many reasons why it became a very interesting subject of investigation. We have used a Fourier transform spectrometer, a flexible instrument with high spectral resolution to investigate single InP nanowires with different doping, where no blue shift corresponding to state filling effect was observed, and the electro-optical properties of GaSb/InAsSb/InAs far infrared photodetectors. Also, electroluminescence of InP nanowire based light emitting diodes with a radial InP/InAsP/InP quantum well was studied. Broad spectrum, due to a non-uniform width of the quantum well, with two peaks at 1.46 eV and 1.57 eV was measured. (Less)
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author
Vainorius, Neimantas LU
supervisor
organization
course
FYSM31 20112
year
type
L3 - Miscellaneous, Projetcs etc.
subject
keywords
Nanowire, InP LED, differently doped InP FETs, GaSb/InAsSb/InAs photodetectors, Fourier transform spectroscopy.
language
English
id
2296049
date added to LUP
2012-01-25 17:16:43
date last changed
2012-11-12 22:45:02
@misc{2296049,
  abstract     = {Degradation of properties of semiconductor devices when layers of different materials are grown on top of each other is a common issue if their lattices are mismatched. Strain between them is reduced by creating defects like vacancies. This problem can be solved by growing structures, called nanowires, where stress is reduced radially. It is one of many reasons why it became a very interesting subject of investigation. We have used a Fourier transform spectrometer, a flexible instrument with high spectral resolution to investigate single InP nanowires with different doping, where no blue shift corresponding to state filling effect was observed, and the electro-optical properties of GaSb/InAsSb/InAs far infrared photodetectors. Also, electroluminescence of InP nanowire based light emitting diodes with a radial InP/InAsP/InP quantum well was studied. Broad spectrum, due to a non-uniform width of the quantum well, with two peaks at 1.46 eV and 1.57 eV was measured.},
  author       = {Vainorius, Neimantas},
  keyword      = {Nanowire,InP LED,differently doped InP FETs,GaSb/InAsSb/InAs photodetectors,Fourier transform spectroscopy.},
  language     = {eng},
  note         = {Student Paper},
  title        = {Electro-optical Characterization of Semiconductor Nanowire Devices},
  year         = {2012},
}