Advanced processing of vertically aligned nanodevices
(2013) FYSB06 20131Department of Physics
- Abstract
- Lithography technique is highly dependent on the photoresist that is used for the processing of the nanodevices. S1800 series photoresist is probably the most used positive photoresist for UV-lithography process. In this project the electrical and optical properties of the photoresist S1800 are studied in order to find if photoresist could be used as a transparent insulator for photo detectors/solar cells/LEDs. Spinning speed dependent thickness and breakdown voltage of the resist is studied, as well as its photoabsorption. It was observed that S1800 photoresist possess high resistivity and remains a strong insulator upto 400 nm thickness even with an applied bias of 100 V. It was also observed that S1800 photoresist shows higher... (More)
- Lithography technique is highly dependent on the photoresist that is used for the processing of the nanodevices. S1800 series photoresist is probably the most used positive photoresist for UV-lithography process. In this project the electrical and optical properties of the photoresist S1800 are studied in order to find if photoresist could be used as a transparent insulator for photo detectors/solar cells/LEDs. Spinning speed dependent thickness and breakdown voltage of the resist is studied, as well as its photoabsorption. It was observed that S1800 photoresist possess high resistivity and remains a strong insulator upto 400 nm thickness even with an applied bias of 100 V. It was also observed that S1800 photoresist shows higher transmission intensity comparing with ITO (Indium-Tin-Oxide) layer. (Less)
Please use this url to cite or link to this publication:
http://lup.lub.lu.se/student-papers/record/3737105
- author
- Biswas, Shantonu LU
- supervisor
- organization
- course
- FYSB06 20131
- year
- 2013
- type
- H2 - Master's Degree (Two Years)
- subject
- keywords
- photoresist, S1800, photodetector, nanowire, metal contact
- language
- English
- id
- 3737105
- date added to LUP
- 2014-03-26 13:11:57
- date last changed
- 2014-03-26 13:11:57
@misc{3737105, abstract = {{Lithography technique is highly dependent on the photoresist that is used for the processing of the nanodevices. S1800 series photoresist is probably the most used positive photoresist for UV-lithography process. In this project the electrical and optical properties of the photoresist S1800 are studied in order to find if photoresist could be used as a transparent insulator for photo detectors/solar cells/LEDs. Spinning speed dependent thickness and breakdown voltage of the resist is studied, as well as its photoabsorption. It was observed that S1800 photoresist possess high resistivity and remains a strong insulator upto 400 nm thickness even with an applied bias of 100 V. It was also observed that S1800 photoresist shows higher transmission intensity comparing with ITO (Indium-Tin-Oxide) layer.}}, author = {{Biswas, Shantonu}}, language = {{eng}}, note = {{Student Paper}}, title = {{Advanced processing of vertically aligned nanodevices}}, year = {{2013}}, }