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LUND UNIVERSITY LIBRARIES

Advanced processing of vertically aligned nanodevices

Biswas, Shantonu LU (2013) FYSB06 20131
Department of Physics
Abstract
Lithography technique is highly dependent on the photoresist that is used for the processing of the nanodevices. S1800 series photoresist is probably the most used positive photoresist for UV-lithography process. In this project the electrical and optical properties of the photoresist S1800 are studied in order to find if photoresist could be used as a transparent insulator for photo detectors/solar cells/LEDs. Spinning speed dependent thickness and breakdown voltage of the resist is studied, as well as its photoabsorption. It was observed that S1800 photoresist possess high resistivity and remains a strong insulator upto 400 nm thickness even with an applied bias of 100 V. It was also observed that S1800 photoresist shows higher... (More)
Lithography technique is highly dependent on the photoresist that is used for the processing of the nanodevices. S1800 series photoresist is probably the most used positive photoresist for UV-lithography process. In this project the electrical and optical properties of the photoresist S1800 are studied in order to find if photoresist could be used as a transparent insulator for photo detectors/solar cells/LEDs. Spinning speed dependent thickness and breakdown voltage of the resist is studied, as well as its photoabsorption. It was observed that S1800 photoresist possess high resistivity and remains a strong insulator upto 400 nm thickness even with an applied bias of 100 V. It was also observed that S1800 photoresist shows higher transmission intensity comparing with ITO (Indium-Tin-Oxide) layer. (Less)
Please use this url to cite or link to this publication:
author
Biswas, Shantonu LU
supervisor
organization
course
FYSB06 20131
year
type
H2 - Master's Degree (Two Years)
subject
keywords
photoresist, S1800, photodetector, nanowire, metal contact
language
English
id
3737105
date added to LUP
2014-03-26 13:11:57
date last changed
2014-03-26 13:11:57
@misc{3737105,
  abstract     = {Lithography technique is highly dependent on the photoresist that is used for the processing of the nanodevices. S1800 series photoresist is probably the most used positive photoresist for UV-lithography process. In this project the electrical and optical properties of the photoresist S1800 are studied in order to find if photoresist could be used as a transparent insulator for photo detectors/solar cells/LEDs. Spinning speed dependent thickness and breakdown voltage of the resist is studied, as well as its photoabsorption. It was observed that S1800 photoresist possess high resistivity and remains a strong insulator upto 400 nm thickness even with an applied bias of 100 V. It was also observed that S1800 photoresist shows higher transmission intensity comparing with ITO (Indium-Tin-Oxide) layer.},
  author       = {Biswas, Shantonu},
  keyword      = {photoresist,S1800,photodetector,nanowire,metal contact},
  language     = {eng},
  note         = {Student Paper},
  title        = {Advanced processing of vertically aligned nanodevices},
  year         = {2013},
}