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Atomic scale modication of semiconductor nanostructure surfaces

Sutinen Svärd, Robin LU (2013) FYSK01 20131
Department of Physics
Abstract
The III-V semiconducting compounds InAs and GaSb were studied using scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). Different crystal planes of each material were investigated separately, including wafers of InAs(111)A, InAs(111)B, InAs(110), GaSb(100), GaSb(110) as well as nanowires consisting of InAs. All these materials were imaged both before and after exposure to atomic hydrogen along with moderate annealing in order to compare and characterize changes of the surface morphology. Generally, a high success rate for cleaning with atomic hydrogen was established, with atomic resolution achieved for InAs(111)A, InAs(110), GaSb(100) and the nanowires. Conclusions regarding reconstructions of the surfaces were... (More)
The III-V semiconducting compounds InAs and GaSb were studied using scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). Different crystal planes of each material were investigated separately, including wafers of InAs(111)A, InAs(111)B, InAs(110), GaSb(100), GaSb(110) as well as nanowires consisting of InAs. All these materials were imaged both before and after exposure to atomic hydrogen along with moderate annealing in order to compare and characterize changes of the surface morphology. Generally, a high success rate for cleaning with atomic hydrogen was established, with atomic resolution achieved for InAs(111)A, InAs(110), GaSb(100) and the nanowires. Conclusions regarding reconstructions of the surfaces were made from STM measurements, and regarding remnant oxides and the efficiency of the cleaning recipes from XPS data. (Less)
Please use this url to cite or link to this publication:
author
Sutinen Svärd, Robin LU
supervisor
organization
course
FYSK01 20131
year
type
M2 - Bachelor Degree
subject
keywords
STM, GaSb, InAs, Surface science, XPS
language
English
id
3941061
date added to LUP
2013-08-13 17:37:53
date last changed
2013-08-13 17:37:53
@misc{3941061,
  abstract     = {The III-V semiconducting compounds InAs and GaSb were studied using scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). Different crystal planes of each material were investigated separately, including wafers of InAs(111)A, InAs(111)B, InAs(110), GaSb(100), GaSb(110) as well as nanowires consisting of InAs. All these materials were imaged both before and after exposure to atomic hydrogen along with moderate annealing in order to compare and characterize changes of the surface morphology. Generally, a high success rate for cleaning with atomic hydrogen was established, with atomic resolution achieved for InAs(111)A, InAs(110), GaSb(100) and the nanowires. Conclusions regarding reconstructions of the surfaces were made from STM measurements, and regarding remnant oxides and the efficiency of the cleaning recipes from XPS data.},
  author       = {Sutinen Svärd, Robin},
  keyword      = {STM,GaSb,InAs,Surface science,XPS},
  language     = {eng},
  note         = {Student Paper},
  title        = {Atomic scale modication of semiconductor nanostructure surfaces},
  year         = {2013},
}