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Simulations of III-V NWFET Double-Balanced Gilbert Cells with an Improved Noise Model

Lindblad, Niklas LU (2013) EITM01 20131
Department of Electrical and Information Technology
Abstract
III-V nanowire transistors might provide a mean for extending Moore’s law, by overcoming the scaling limitations ultimately facing planar silicon CMOS. These high frequency capable transistors with cut-off frequencies in the terahertz regime are suitable for radio communication. In this project an active double-balanced gilbert cell mixer consisting of nanowire field-effect transistors (NWFETs) was simulated in Cadence Virtuoso using a compact transistor model. The transistor model was extended to take flicker and thermal noise into account, in order to more accurately compare the mixers against state-of-the-art silicon CMOS implementations.

The final mixer for 60 GHz showed much greater linearity (0.4 dBm 1 dB compression and 8.5 dBm... (More)
III-V nanowire transistors might provide a mean for extending Moore’s law, by overcoming the scaling limitations ultimately facing planar silicon CMOS. These high frequency capable transistors with cut-off frequencies in the terahertz regime are suitable for radio communication. In this project an active double-balanced gilbert cell mixer consisting of nanowire field-effect transistors (NWFETs) was simulated in Cadence Virtuoso using a compact transistor model. The transistor model was extended to take flicker and thermal noise into account, in order to more accurately compare the mixers against state-of-the-art silicon CMOS implementations.

The final mixer for 60 GHz showed much greater linearity (0.4 dBm 1 dB compression and 8.5 dBm IIP 3) than previously reported silicon CMOS counterparts. It exhibited a conversion gain of 3.47 dB, a N F DSB of 14.6 dB and a DC power consumption of 8.7 mW.Based on these findings the design requirements for suitable low noise amplifier was discussed. (Less)
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author
Lindblad, Niklas LU
supervisor
organization
course
EITM01 20131
year
type
H3 - Professional qualifications (4 Years - )
subject
report number
LU/LTH-EIT 2013-335
language
English
id
4124543
date added to LUP
2015-03-17 15:48:21
date last changed
2015-03-17 15:48:21
@misc{4124543,
  abstract     = {III-V nanowire transistors might provide a mean for extending Moore’s law, by overcoming the scaling limitations ultimately facing planar silicon CMOS. These high frequency capable transistors with cut-off frequencies in the terahertz regime are suitable for radio communication. In this project an active double-balanced gilbert cell mixer consisting of nanowire field-effect transistors (NWFETs) was simulated in Cadence Virtuoso using a compact transistor model. The transistor model was extended to take flicker and thermal noise into account, in order to more accurately compare the mixers against state-of-the-art silicon CMOS implementations.

The final mixer for 60 GHz showed much greater linearity (0.4 dBm 1 dB compression and 8.5 dBm IIP 3) than previously reported silicon CMOS counterparts. It exhibited a conversion gain of 3.47 dB, a N F DSB of 14.6 dB and a DC power consumption of 8.7 mW.Based on these findings the design requirements for suitable low noise amplifier was discussed.},
  author       = {Lindblad, Niklas},
  language     = {eng},
  note         = {Student Paper},
  title        = {Simulations of III-V NWFET Double-Balanced Gilbert Cells with an Improved Noise Model},
  year         = {2013},
}