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- 2022
-
Mark
Laminated HZO on InAs: A study of as-deposited ferroelectricity
- Master (Two yrs)
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Mark
Analysis of condition for ALD deposition of ferroelectric HZO
- Master (Two yrs)
- 2020
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Mark
HfO2 and ITO Resistive Random-Access Memory
- Master (Two yrs)
- 2019
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Mark
Ferroelectric Gate-Stack on InAs
- Master (Two yrs)
- 2017
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Mark
Simulation and TLM studies of vertical nanowire devices
- Master (One yr)
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Mark
Fabrication and Charaterisation of Finger Gates
- Master (Two yrs)
- 2016
-
Mark
Effect of active load on III-V NWFET Double-Balanced Gilbert Cells
- Master (Two yrs)
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Mark
Vertical heterostructure III-V nanowire MOSFETs
(2016) In Vertical heterostructure III-V nanowire MOSFETs EITM01 20161
Department of Electrical and Information Technology- Master (Two yrs)
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Mark
Electro-optical characterization of BaTiO3 based active photonic devices on silicon
- Master (Two yrs)
-
Mark
InAs MOS capacitors;Fabrication & Characterization
- Bach. Degree