Characterization of Emerging Non-Volatile Cryogenic Memories
(2023) EITM02 20231Department of Electrical and Information Technology
- Abstract
- In this thesis, two emerging non-volatile memories, being the resistive random access memory and a ferroelectric capacitor were characterized at cryogenic temperatures. This was carried out due to the demand for non-volatile CMOS compatible cryogenic memories for quantum computing applications. Both devices exhibit good switching characteristics, endurance >10^7 cycles and multilevel capability. Making both of them viable options.
- Popular Abstract
- We are absolutely surrounded by computers everywhere we go or look. These very computers are often much smarter and have higher precision than the human brain for specific tasks and calculations. However, there are certain problems and calculations that would take way too long for regular computers, birthing the need for quantum computers. Quantum computers exhibit unparalleled computational capabilities, capable of solving intricate problems that conventionally-architected computers find insurmountable.
However, quantum computers demand operation under exceedingly low temperatures to harness their unique properties effectively. Further, just like any other technology, it too needs to be scaled. To achieve this, all the memory... (More) - We are absolutely surrounded by computers everywhere we go or look. These very computers are often much smarter and have higher precision than the human brain for specific tasks and calculations. However, there are certain problems and calculations that would take way too long for regular computers, birthing the need for quantum computers. Quantum computers exhibit unparalleled computational capabilities, capable of solving intricate problems that conventionally-architected computers find insurmountable.
However, quantum computers demand operation under exceedingly low temperatures to harness their unique properties effectively. Further, just like any other technology, it too needs to be scaled. To achieve this, all the memory technologies used in the set-up must also be placed in extremely cold temperatures. These systems are not designed to operate in the harsh conditions of such low temperatures and preserving data in electronic systems is an intricate task to begin with. The convergence of cutting-edge science and technology becomes extremely important in such a situation.
Enter cryogenic memories – purpose-built for operation within such extreme thermal conditions. In this work, we go through and characterize two different emerging non-volatile memory technologies at cryogenic temperatures (as low as ≈ -260°C or 14 K) and evaluate their cryogenic performance. The non-volatility of these memory technologies is like adding a cherry on top. (Less)
Please use this url to cite or link to this publication:
http://lup.lub.lu.se/student-papers/record/9135036
- author
- Mamidala, Karthik Ram LU
- supervisor
- organization
- course
- EITM02 20231
- year
- 2023
- type
- H2 - Master's Degree (Two Years)
- subject
- keywords
- Cryogenic, Non-volatile memory, Ferroelectric Capacitor, Resistive Random Access Memory, FeCAP, RRAM, III-V, InAs
- report number
- LU/LTH-EIT 2024-1027
- language
- English
- id
- 9135036
- date added to LUP
- 2024-10-28 10:53:20
- date last changed
- 2024-10-28 10:53:20
@misc{9135036, abstract = {{In this thesis, two emerging non-volatile memories, being the resistive random access memory and a ferroelectric capacitor were characterized at cryogenic temperatures. This was carried out due to the demand for non-volatile CMOS compatible cryogenic memories for quantum computing applications. Both devices exhibit good switching characteristics, endurance >10^7 cycles and multilevel capability. Making both of them viable options.}}, author = {{Mamidala, Karthik Ram}}, language = {{eng}}, note = {{Student Paper}}, title = {{Characterization of Emerging Non-Volatile Cryogenic Memories}}, year = {{2023}}, }