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Characterization of Emerging Non-Volatile Cryogenic Memories

Mamidala, Karthik Ram LU (2023) EITM02 20231
Department of Electrical and Information Technology
Abstract
In this thesis, two emerging non-volatile memories, being the resistive random access memory and a ferroelectric capacitor were characterized at cryogenic temperatures. This was carried out due to the demand for non-volatile CMOS compatible cryogenic memories for quantum computing applications. Both devices exhibit good switching characteristics, endurance >10^7 cycles and multilevel capability. Making both of them viable options.
Popular Abstract
We are absolutely surrounded by computers everywhere we go or look. These very computers are often much smarter and have higher precision than the human brain for specific tasks and calculations. However, there are certain problems and calculations that would take way too long for regular computers, birthing the need for quantum computers. Quantum computers exhibit unparalleled computational capabilities, capable of solving intricate problems that conventionally-architected computers find insurmountable.
However, quantum computers demand operation under exceedingly low temperatures to harness their unique properties effectively. Further, just like any other technology, it too needs to be scaled. To achieve this, all the memory... (More)
We are absolutely surrounded by computers everywhere we go or look. These very computers are often much smarter and have higher precision than the human brain for specific tasks and calculations. However, there are certain problems and calculations that would take way too long for regular computers, birthing the need for quantum computers. Quantum computers exhibit unparalleled computational capabilities, capable of solving intricate problems that conventionally-architected computers find insurmountable.
However, quantum computers demand operation under exceedingly low temperatures to harness their unique properties effectively. Further, just like any other technology, it too needs to be scaled. To achieve this, all the memory technologies used in the set-up must also be placed in extremely cold temperatures. These systems are not designed to operate in the harsh conditions of such low temperatures and preserving data in electronic systems is an intricate task to begin with. The convergence of cutting-edge science and technology becomes extremely important in such a situation.
Enter cryogenic memories – purpose-built for operation within such extreme thermal conditions. In this work, we go through and characterize two different emerging non-volatile memory technologies at cryogenic temperatures (as low as ≈ -260°C or 14 K) and evaluate their cryogenic performance. The non-volatility of these memory technologies is like adding a cherry on top. (Less)
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author
Mamidala, Karthik Ram LU
supervisor
organization
course
EITM02 20231
year
type
H2 - Master's Degree (Two Years)
subject
keywords
Cryogenic, Non-volatile memory, Ferroelectric Capacitor, Resistive Random Access Memory, FeCAP, RRAM, III-V, InAs
report number
LU/LTH-EIT 2024-1027
language
English
id
9135036
date added to LUP
2024-10-28 10:53:20
date last changed
2024-10-28 10:53:20
@misc{9135036,
  abstract     = {{In this thesis, two emerging non-volatile memories, being the resistive random access memory and a ferroelectric capacitor were characterized at cryogenic temperatures. This was carried out due to the demand for non-volatile CMOS compatible cryogenic memories for quantum computing applications. Both devices exhibit good switching characteristics, endurance >10^7 cycles and multilevel capability. Making both of them viable options.}},
  author       = {{Mamidala, Karthik Ram}},
  language     = {{eng}},
  note         = {{Student Paper}},
  title        = {{Characterization of Emerging Non-Volatile Cryogenic Memories}},
  year         = {{2023}},
}