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Reactive Ion Etching of Silicon using F-based chemistry - Exploring the Limits

Havir, Harald LU (2018) FYSK02 20181
Solid State Physics
Department of Physics
Abstract (Swedish)
Dry Etching is widely used in nanoprocessing as a method of pattern transfer onto a hard substrate, like silicon. Improving the resolution of this etch process is an important step in reducing the feature size in, for instance, computer microchips, or Nanoimprint Lithography stamps.
TheReactiveIonEtcheratLundUniversityhasrecentlybeenupgradedwithaturbo molecular pump. This allows for lower pressure ranges with any given gas flow in the working chamber. Therefore, a sufficient process window had to be established for the upgraded system, where a plasma can be generated and sustained in a stable manner. The study shows that the process window for the system appears to be large, with power, pressure and flow rates not hindering plasma generation... (More)
Dry Etching is widely used in nanoprocessing as a method of pattern transfer onto a hard substrate, like silicon. Improving the resolution of this etch process is an important step in reducing the feature size in, for instance, computer microchips, or Nanoimprint Lithography stamps.
TheReactiveIonEtcheratLundUniversityhasrecentlybeenupgradedwithaturbo molecular pump. This allows for lower pressure ranges with any given gas flow in the working chamber. Therefore, a sufficient process window had to be established for the upgraded system, where a plasma can be generated and sustained in a stable manner. The study shows that the process window for the system appears to be large, with power, pressure and flow rates not hindering plasma generation outside of hardware limitations.
A recipe for anisotropic etching was developed and, although limited in etch rates and mask selectivity, the process shows promise as anisotropic structures as small as 30 nm were successfully etched with anisotropic features. (Less)
Please use this url to cite or link to this publication:
author
Havir, Harald LU
supervisor
organization
course
FYSK02 20181
year
type
M2 - Bachelor Degree
subject
keywords
Reactive Ion Etching, Plasma Etching, CHF3, SF6, High Anisotropy
language
English
id
8954355
date added to LUP
2018-07-04 12:44:15
date last changed
2018-07-04 12:44:15
@misc{8954355,
  abstract     = {Dry Etching is widely used in nanoprocessing as a method of pattern transfer onto a hard substrate, like silicon. Improving the resolution of this etch process is an important step in reducing the feature size in, for instance, computer microchips, or Nanoimprint Lithography stamps.
TheReactiveIonEtcheratLundUniversityhasrecentlybeenupgradedwithaturbo molecular pump. This allows for lower pressure ranges with any given gas flow in the working chamber. Therefore, a sufficient process window had to be established for the upgraded system, where a plasma can be generated and sustained in a stable manner. The study shows that the process window for the system appears to be large, with power, pressure and flow rates not hindering plasma generation outside of hardware limitations.
A recipe for anisotropic etching was developed and, although limited in etch rates and mask selectivity, the process shows promise as anisotropic structures as small as 30 nm were successfully etched with anisotropic features.},
  author       = {Havir, Harald},
  keyword      = {Reactive Ion Etching,Plasma Etching,CHF3,SF6,High Anisotropy},
  language     = {eng},
  note         = {Student Paper},
  title        = {Reactive Ion Etching of Silicon using F-based chemistry - Exploring the Limits},
  year         = {2018},
}