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The self-screening correction to RPA and GW – A model and ab initio study

Christiansson, Viktor LU (2019) FYSM60 20191
Mathematical Physics
Department of Physics
Abstract
The self-screening error in the GW approximation is studied by applying correction schemes beyond the random-phase approximation in model and ab inito calculations. Two model systems in the form of Hubbard dimers, with one and two orbitals per site respectively, are considered. Both the self-screening (GW-ss) and self-polarization (GW-sp) correction schemes are compared to ordinary GW calculations as well as to the exact results. It is found that GW-ss provides a signicant improvement for small values of the interaction strength U0, almost correctly describing the linear density response function and improving the spectral function over that obtained within GW. GW-sp instead correctly describes the HOMOLUMO gap for the one-orbital model in... (More)
The self-screening error in the GW approximation is studied by applying correction schemes beyond the random-phase approximation in model and ab inito calculations. Two model systems in the form of Hubbard dimers, with one and two orbitals per site respectively, are considered. Both the self-screening (GW-ss) and self-polarization (GW-sp) correction schemes are compared to ordinary GW calculations as well as to the exact results. It is found that GW-ss provides a signicant improvement for small values of the interaction strength U0, almost correctly describing the linear density response function and improving the spectral function over that obtained within GW. GW-sp instead correctly describes the HOMOLUMO gap for the one-orbital model in the limit of large U0, and provides a better agreement also for the spectral function in that regime, while still being approximately as accurate as GW-ss in describing the response and spectral function for lower interaction strengths. It is further found that GW-sp suers from causality issues. The ab initio calculations were performed using a version of the SPEX code modied to include the self-screening correction. The correction is applied to four semiconductors: GaAs, ZnSe, Ge, and ZnO. It is found that the self-screening correction signicantly improved the band gap for GaAs and ZnSe compared to ordinary GW calculations, while it marginally overestimates the width for Ge, and improves the ZnO one slightly. Further it is found to provide a small
improvement also of the energy-placement of the semicore 3d states. A comparison is also ade regarding the dierences of the two correction schemes. It is concluded that the GW-ss scheme seems to provide the best correction for delocalized systems. GW-sp instead gives the better description for large interaction strengths, and hence more localized systems, although simultaneously being able to give a good agreement for small U0 in the model calculations. (Less)
Please use this url to cite or link to this publication:
author
Christiansson, Viktor LU
supervisor
organization
course
FYSM60 20191
year
type
H2 - Master's Degree (Two Years)
subject
keywords
GW approximation, GWA, Random-Phase-Approximation, RPA, Self-screening, Self-screening correction, Beyond RPA, Beyond GW
language
English
id
8988577
date added to LUP
2019-06-27 10:30:58
date last changed
2020-06-27 03:40:19
@misc{8988577,
  abstract     = {{The self-screening error in the GW approximation is studied by applying correction schemes beyond the random-phase approximation in model and ab inito calculations. Two model systems in the form of Hubbard dimers, with one and two orbitals per site respectively, are considered. Both the self-screening (GW-ss) and self-polarization (GW-sp) correction schemes are compared to ordinary GW calculations as well as to the exact results. It is found that GW-ss provides a signicant improvement for small values of the interaction strength U0, almost correctly describing the linear density response function and improving the spectral function over that obtained within GW. GW-sp instead correctly describes the HOMOLUMO gap for the one-orbital model in the limit of large U0, and provides a better agreement also for the spectral function in that regime, while still being approximately as accurate as GW-ss in describing the response and spectral function for lower interaction strengths. It is further found that GW-sp suers from causality issues. The ab initio calculations were performed using a version of the SPEX code modied to include the self-screening correction. The correction is applied to four semiconductors: GaAs, ZnSe, Ge, and ZnO. It is found that the self-screening correction signicantly improved the band gap for GaAs and ZnSe compared to ordinary GW calculations, while it marginally overestimates the width for Ge, and improves the ZnO one slightly. Further it is found to provide a small
improvement also of the energy-placement of the semicore 3d states. A comparison is also ade regarding the dierences of the two correction schemes. It is concluded that the GW-ss scheme seems to provide the best correction for delocalized systems. GW-sp instead gives the better description for large interaction strengths, and hence more localized systems, although simultaneously being able to give a good agreement for small U0 in the model calculations.}},
  author       = {{Christiansson, Viktor}},
  language     = {{eng}},
  note         = {{Student Paper}},
  title        = {{The self-screening correction to RPA and GW – A model and ab initio study}},
  year         = {{2019}},
}