Nanowire based mm-wave LNA and switch design
(2020) EITM01 20201Department of Electrical and Information Technology
- Abstract
- In this work, two LNAs operating at a frequency around 83 GHz and 110 GHz, for satellite- and 5G applications respectively, have been designed, using vertical InGaAs nanowire transistors. In addition, a switch operating at a frequency around 110 GHz has been designed. The topology has consisted of a common source as a first stage, and a cascode as a second stage. The design and simulations of the design have been performed in National Instruments (NI) AWR. The results from the simulations of the 5G LNA show a noise figure less than of 2.6 dB for a bandwidth of 16.4 GHz from 103.6 to 120.0 GHz with a peak gain of 24.5 dB. For the satellite LNA, the noise figure is less than 2.8 dB and the gain is more than 21.8 dB for the full uplink E-band... (More)
- In this work, two LNAs operating at a frequency around 83 GHz and 110 GHz, for satellite- and 5G applications respectively, have been designed, using vertical InGaAs nanowire transistors. In addition, a switch operating at a frequency around 110 GHz has been designed. The topology has consisted of a common source as a first stage, and a cascode as a second stage. The design and simulations of the design have been performed in National Instruments (NI) AWR. The results from the simulations of the 5G LNA show a noise figure less than of 2.6 dB for a bandwidth of 16.4 GHz from 103.6 to 120.0 GHz with a peak gain of 24.5 dB. For the satellite LNA, the noise figure is less than 2.8 dB and the gain is more than 21.8 dB for the full uplink E-band from 81 to 86 GHz, and achieves a total 3-dB bandwidth of 8 GHz, with a peak gain of 23.2 dB. The transmitter to receiver isolation of the switch is more than 22 dB and the insertion loss less than 2.2 dB from 97.5 to 120.0 GHz. (Less)
- Popular Abstract
- Today, more and more people use internet, and it is just not the number of internet users that is rapidly changing. People use it for more things now than just to search for information, as was the main use of internet for a long time. Today, wireless internet with high data speed finds applications in various things such as self-driving cars and sensors that monitors people, agriculture, and forests. To achieve the high data speeds necessary for these tasks, the frequency of operation have to increase, but this requires transistors with good high frequency characteristics. Transistors can be made from Indium-Gallium-Arsenide nanowires that operates at these high frequencies. For the receiver to be able to function properly, a switch must... (More)
- Today, more and more people use internet, and it is just not the number of internet users that is rapidly changing. People use it for more things now than just to search for information, as was the main use of internet for a long time. Today, wireless internet with high data speed finds applications in various things such as self-driving cars and sensors that monitors people, agriculture, and forests. To achieve the high data speeds necessary for these tasks, the frequency of operation have to increase, but this requires transistors with good high frequency characteristics. Transistors can be made from Indium-Gallium-Arsenide nanowires that operates at these high frequencies. For the receiver to be able to function properly, a switch must guide the received signals to the right low noise amplifier. The low noise amplifier then amplifies the signals without adding to much noise. Both the switch and the receiver are generally more difficult to design the higher frequencies they operate. In addition, the linearity performance has to be good enough, while the power consumption cannot be too high, otherwise the batteries will be drained to fast. This can be accomplished by selecting the right bias point for the transistors, match the transistors to the right passive elements etc. (Less)
Please use this url to cite or link to this publication:
http://lup.lub.lu.se/student-papers/record/9024432
- author
- Grenmyr, Andreas LU
- supervisor
- organization
- course
- EITM01 20201
- year
- 2020
- type
- H2 - Master's Degree (Two Years)
- subject
- keywords
- LNA mm-wave RF switch nanowire MOSFET
- report number
- LU/LTH-EIT 2020-781
- language
- English
- id
- 9024432
- date added to LUP
- 2020-09-01 13:17:56
- date last changed
- 2020-09-01 13:17:56
@misc{9024432,
abstract = {{In this work, two LNAs operating at a frequency around 83 GHz and 110 GHz, for satellite- and 5G applications respectively, have been designed, using vertical InGaAs nanowire transistors. In addition, a switch operating at a frequency around 110 GHz has been designed. The topology has consisted of a common source as a first stage, and a cascode as a second stage. The design and simulations of the design have been performed in National Instruments (NI) AWR. The results from the simulations of the 5G LNA show a noise figure less than of 2.6 dB for a bandwidth of 16.4 GHz from 103.6 to 120.0 GHz with a peak gain of 24.5 dB. For the satellite LNA, the noise figure is less than 2.8 dB and the gain is more than 21.8 dB for the full uplink E-band from 81 to 86 GHz, and achieves a total 3-dB bandwidth of 8 GHz, with a peak gain of 23.2 dB. The transmitter to receiver isolation of the switch is more than 22 dB and the insertion loss less than 2.2 dB from 97.5 to 120.0 GHz.}},
author = {{Grenmyr, Andreas}},
language = {{eng}},
note = {{Student Paper}},
title = {{Nanowire based mm-wave LNA and switch design}},
year = {{2020}},
}