E-Band SPDT RF Switch for a Class F PA in III-V Nanowire MOSFET Technology
(2022) EITM02 20221Department of Electrical and Information Technology
- Abstract
- This project designs an RF switch operating in E-band to provide a transmit path from a Class-F power amplifier (PA). The basic RF switch is based on the single-pole double-throw (SPDT) topology using shunt transistor switches and two λ/4 transmission line. The transistors used in this project are nanowire MOSFET transistors developed by the Division of Electromagnetics and Nanoelectronics, LTH, Lund University. A simple Class-F PA is designed in single stage common source topology and uses RF switch as output matching network. This project mainly investigates the behaviors of the RF switch, especially for the PA-path, and
the performances of Class-F PA. In addition, this project explores the distributed RF switch as Class-F PA output... (More) - This project designs an RF switch operating in E-band to provide a transmit path from a Class-F power amplifier (PA). The basic RF switch is based on the single-pole double-throw (SPDT) topology using shunt transistor switches and two λ/4 transmission line. The transistors used in this project are nanowire MOSFET transistors developed by the Division of Electromagnetics and Nanoelectronics, LTH, Lund University. A simple Class-F PA is designed in single stage common source topology and uses RF switch as output matching network. This project mainly investigates the behaviors of the RF switch, especially for the PA-path, and
the performances of Class-F PA. In addition, this project explores the distributed RF switch as Class-F PA output matching network, in which the λ/4 transmission
line can filter out even and odd harmonics. (Less) - Popular Abstract
- It has been thousands of years from traditional paper communication to wired communication, however, and only a century from wired to wireless. Decades later, wireless communication has made a great contribution to modern science and technology. From user's intuitive experience, one of the biggest variations for different wireless communication generation is the speed. Since fifth generation, or 5G, seems to be fast enough for most users, it is the beginning of the Internet of Things (IoT). IoT aims to connect all the devices, cars, household appliances, to the internet for user-friendly control. Higher frequencies and speeds mean less latency and more reliability for these devices. Besides, some applications, for instances, satellites and... (More)
- It has been thousands of years from traditional paper communication to wired communication, however, and only a century from wired to wireless. Decades later, wireless communication has made a great contribution to modern science and technology. From user's intuitive experience, one of the biggest variations for different wireless communication generation is the speed. Since fifth generation, or 5G, seems to be fast enough for most users, it is the beginning of the Internet of Things (IoT). IoT aims to connect all the devices, cars, household appliances, to the internet for user-friendly control. Higher frequencies and speeds mean less latency and more reliability for these devices. Besides, some applications, for instances, satellites and radar, require higher frequencies up to tens or even hundreds GHz to ensure high-quality and long-distance transmission.
Higher frequencies show more advantages while at the cost of circuit design complexity, especially for transistor modeling. Transistors are getting smaller and smaller, gradually reaching their limits, as a result, new technologies are necessary to be sorted out. Vertical nanowire transistors used in this project will be one of competitive solutions.
Antenna is one of the important component in wireless communication, transmitting and receiving the signal. In order to avoid interruption, antenna can work in Time Division Duplex (TDD) mode, allowing the signal to be transmitted or received in one time slot. An RF switch, in this situation, provides the antenna to change the operating mode, transmitting or receiving. An excellent RF switch shall provide impedance matching, lower power loss and the isolation of two paths.
Since the propagation of the electromagnetic wave in the air is divergent, dissipating power, it is necessary to amplify the power before transmission. The power amplifier (PA), as the last component before the antenna, receives signals from the previous stages and amplifies them to the antenna. The PA design goals are higher gain and robust linearity with the highest possible efficiency. (Less)
Please use this url to cite or link to this publication:
http://lup.lub.lu.se/student-papers/record/9103801
- author
- Xu, Rungeng LU
- supervisor
-
- Lars Ohlsson LU
- Marcus Sandberg LU
- organization
- course
- EITM02 20221
- year
- 2022
- type
- H2 - Master's Degree (Two Years)
- subject
- keywords
- E-band, III-V Nanowire MOSFET, RF Switch, Class-F PA
- report number
- LU/LTH-EIT 2022-902
- language
- English
- id
- 9103801
- date added to LUP
- 2022-12-07 14:39:07
- date last changed
- 2022-12-07 14:39:07
@misc{9103801, abstract = {{This project designs an RF switch operating in E-band to provide a transmit path from a Class-F power amplifier (PA). The basic RF switch is based on the single-pole double-throw (SPDT) topology using shunt transistor switches and two λ/4 transmission line. The transistors used in this project are nanowire MOSFET transistors developed by the Division of Electromagnetics and Nanoelectronics, LTH, Lund University. A simple Class-F PA is designed in single stage common source topology and uses RF switch as output matching network. This project mainly investigates the behaviors of the RF switch, especially for the PA-path, and the performances of Class-F PA. In addition, this project explores the distributed RF switch as Class-F PA output matching network, in which the λ/4 transmission line can filter out even and odd harmonics.}}, author = {{Xu, Rungeng}}, language = {{eng}}, note = {{Student Paper}}, title = {{E-Band SPDT RF Switch for a Class F PA in III-V Nanowire MOSFET Technology}}, year = {{2022}}, }