Skip to main content

LUP Student Papers

LUND UNIVERSITY LIBRARIES

Design and Implementation of an ECC controller for FTJ memristors

Mikalsen, Getz LU (2025) EITM01 20251
Department of Electrical and Information Technology
Abstract
Emerging storage devices, particularly ferroelectric tunnel junction (FTJ)
memristors, offer a compelling solution for high-density storage as they form a
type of non-charge based non-volatile storage capable of storing multiple bits
in each device; however, their adoption is hindered by reliability concerns.
This work addresses this by presenting a design and implementation of an
efficient Error Correcting Code (ECC) controller, leveraging robust
Bose-Chaudhuri-Hocquenghem (BCH) codes.

The work characterizes the error behavior in FTJ memristors fabricated at Lund
University. The work details the VLSI implementation of BCH encoding and
decoding algorithms, including finite field arithmetic, syndrome generation, key
equation... (More)
Emerging storage devices, particularly ferroelectric tunnel junction (FTJ)
memristors, offer a compelling solution for high-density storage as they form a
type of non-charge based non-volatile storage capable of storing multiple bits
in each device; however, their adoption is hindered by reliability concerns.
This work addresses this by presenting a design and implementation of an
efficient Error Correcting Code (ECC) controller, leveraging robust
Bose-Chaudhuri-Hocquenghem (BCH) codes.

The work characterizes the error behavior in FTJ memristors fabricated at Lund
University. The work details the VLSI implementation of BCH encoding and
decoding algorithms, including finite field arithmetic, syndrome generation, key
equation solving, and root finding. This demonstrates a robust ECC solution that
ensures reliable data integrity and maintains competitive read/write speeds for
memristor-based memory systems. (Less)
Popular Abstract
As storage demands continue to grow, traditional memory technologies are
approaching their physical limits. Memristive devices that store information by
changing their electrical resistance rather than storing charge offer a
promising path forward with advantages including excellent data retention, and
the potential for improved storage densities compared to contemporary multi
level flash cells.

While recent research has focused heavily on memristors for processing-in-memory
(PIM) and neural computing applications, this work explores their potential for
traditional data storage, where their density and retention properties may offer
advantages over existing flash memory technologies.

This thesis addresses the reliability... (More)
As storage demands continue to grow, traditional memory technologies are
approaching their physical limits. Memristive devices that store information by
changing their electrical resistance rather than storing charge offer a
promising path forward with advantages including excellent data retention, and
the potential for improved storage densities compared to contemporary multi
level flash cells.

While recent research has focused heavily on memristors for processing-in-memory
(PIM) and neural computing applications, this work explores their potential for
traditional data storage, where their density and retention properties may offer
advantages over existing flash memory technologies.

This thesis addresses the reliability challenge of using memristors by
developing an error correction system based on Bose-Chaudhuri-Hocquenghem (BCH)
codes, a class of error-correcting codes that can detect and correct errors in
stored data. Through characterization of ferroelectric tunnel junction (FTJ)
memristors fabricated at Lund University, the work determines their Raw Bit
Error Rate (RBER) and defines and implements a BCH code to achieve the
reliability requirements for commercial storage applications. (Less)
Please use this url to cite or link to this publication:
author
Mikalsen, Getz LU
supervisor
organization
alternative title
Design och Implementation av en ECC kontroller för FTJ memristorer
course
EITM01 20251
year
type
H2 - Master's Degree (Two Years)
subject
keywords
VLSI, BCH, ECC, FTJ, memristor, RS, memory
report number
LU/LTH-EIT 2025-1077
language
English
id
9209448
date added to LUP
2025-08-22 08:10:26
date last changed
2025-08-22 08:10:26
@misc{9209448,
  abstract     = {{Emerging storage devices, particularly ferroelectric tunnel junction (FTJ)
memristors, offer a compelling solution for high-density storage as they form a
type of non-charge based non-volatile storage capable of storing multiple bits
in each device; however, their adoption is hindered by reliability concerns.
This work addresses this by presenting a design and implementation of an
efficient Error Correcting Code (ECC) controller, leveraging robust
Bose-Chaudhuri-Hocquenghem (BCH) codes.

The work characterizes the error behavior in FTJ memristors fabricated at Lund
University. The work details the VLSI implementation of BCH encoding and
decoding algorithms, including finite field arithmetic, syndrome generation, key
equation solving, and root finding. This demonstrates a robust ECC solution that
ensures reliable data integrity and maintains competitive read/write speeds for
memristor-based memory systems.}},
  author       = {{Mikalsen, Getz}},
  language     = {{eng}},
  note         = {{Student Paper}},
  title        = {{Design and Implementation of an ECC controller for FTJ memristors}},
  year         = {{2025}},
}