Advanced

1/f Noise Characterization in CMOS Transistors in 0.13um Technology

Citakovic, Jelena; Stenberg, Lars and Andreani, Pietro LU (2006) In 24th Norchip Conference, 2006. p.81-84
Abstract
Low-frequency noise has been studied on a set of n- and p-channel CMOS transistors fabricated in a 0.13mum technology. Noise measurements have been performed on transistors with different gate lengths operating under wide bias conditions, ranging from weak to strong inversion. Noise origin has been identified for both type of devices, and the oxide trap density Nt, the Hooge parameter alphaH and the Coulomb scattering parameter alphas have been extracted. The experimental results are compared with simulations using the BSIM3v3 MOS model
Please use this url to cite or link to this publication:
author
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
24th Norchip Conference, 2006.
pages
81 - 84
external identifiers
  • Scopus:34547318998
ISBN
1-4244-0772-9
DOI
10.1109/NORCHP.2006.329249
language
English
LU publication?
no
id
7248cf22-e6d7-4ef4-be3e-c53521b4b1bb (old id 1051059)
alternative location
http://ieeexplore.ieee.org/iel5/4126933/4075696/04126952.pdf?tp=&isnumber=4075696&arnumber=4126952&punumber=4126933
date added to LUP
2008-03-31 11:58:56
date last changed
2016-10-13 04:55:22
@misc{7248cf22-e6d7-4ef4-be3e-c53521b4b1bb,
  abstract     = {Low-frequency noise has been studied on a set of n- and p-channel CMOS transistors fabricated in a 0.13mum technology. Noise measurements have been performed on transistors with different gate lengths operating under wide bias conditions, ranging from weak to strong inversion. Noise origin has been identified for both type of devices, and the oxide trap density Nt, the Hooge parameter alphaH and the Coulomb scattering parameter alphas have been extracted. The experimental results are compared with simulations using the BSIM3v3 MOS model},
  author       = {Citakovic, Jelena and Stenberg, Lars and Andreani, Pietro},
  isbn         = {1-4244-0772-9},
  language     = {eng},
  pages        = {81--84},
  series       = {24th Norchip Conference, 2006.},
  title        = {1/f Noise Characterization in CMOS Transistors in 0.13um Technology},
  url          = {http://dx.doi.org/10.1109/NORCHP.2006.329249},
  year         = {2006},
}