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A 15 GHz and a 20 GHz low noise amplifier in 90 nm RF CMOS

Aspemyr, Lars LU ; Jacobsson, Harald; Bao, Mingquan; Sjöland, Henrik LU ; Ferndal, Mattias and Carchon, G (2006) In Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems p.387-390
Abstract
The design and measured performance of two low-noise amplifiers at 15 GHz and 20 GHz realized in a 90 nm RF-CMOS process are presented in this work. The 15 GHz LNA achieves a power gain of 12.9 dB, a noise figure of 2.0 dB and an input referred third-order intercept point (IIP3) of -2.3 dBm. The 20 GHz LNA has a power gain of 8.6 dB, a noise figure of 3.0 dB and an IIP3 of 5.6 dBm. Compared to previously reported designs, these two LNAs show lower noise figure at lower power consumption.
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
pages
387 - 390
external identifiers
  • Scopus:33847076469
ISBN
0-7803-9472-0
DOI
10.1109/SMIC.2005.1588004
language
English
LU publication?
yes
id
9b7dca97-8856-4822-995e-4eda47562cea (old id 1244496)
date added to LUP
2008-10-08 12:44:44
date last changed
2016-10-13 04:59:57
@misc{9b7dca97-8856-4822-995e-4eda47562cea,
  abstract     = {The design and measured performance of two low-noise amplifiers at 15 GHz and 20 GHz realized in a 90 nm RF-CMOS process are presented in this work. The 15 GHz LNA achieves a power gain of 12.9 dB, a noise figure of 2.0 dB and an input referred third-order intercept point (IIP3) of -2.3 dBm. The 20 GHz LNA has a power gain of 8.6 dB, a noise figure of 3.0 dB and an IIP3 of 5.6 dBm. Compared to previously reported designs, these two LNAs show lower noise figure at lower power consumption.},
  author       = {Aspemyr, Lars and Jacobsson, Harald and Bao, Mingquan and Sjöland, Henrik and Ferndal, Mattias and Carchon, G},
  isbn         = {0-7803-9472-0},
  language     = {eng},
  pages        = {387--390},
  series       = {Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems},
  title        = {A 15 GHz and a 20 GHz low noise amplifier in 90 nm RF CMOS},
  url          = {http://dx.doi.org/10.1109/SMIC.2005.1588004},
  year         = {2006},
}