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A 90nm CMOS UWB LNA

Axholt, Andreas LU ; Ahmad, Waqas LU and Sjöland, Henrik LU (2008) Norchip Conference, 2008 In [Host publication title missing] p.25-28
Abstract
A single-ended two-stage 3.1-10.6GHz Low Noise Amplifier aimed for Ultra Wide Band (UWB) communication is presented. The LNA is fabricated in a 90nm CMOS process and measures just 0.31x0.41 mm2 including pads. The first stage topology is common-gate, to achieve a wideband input match. The second stage is a common source stage with resistive shunt feedback, to achieve high and flat gain over a wide frequency range. The chip was measured using RF-probes and has a gain of 17.25±1.25dB, a noise figure of 4.1-9.4 dB, and an input reflection S11 better than -12dB between 3.1GHz and 10.6GHz, while consuming 8.6mA from a 1V supply.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
[Host publication title missing]
pages
4 pages
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
Norchip Conference, 2008
external identifiers
  • Scopus:62949153878
ISBN
978-1-4244-2492-4
DOI
10.1109/NORCHP.2008.4738276
language
English
LU publication?
yes
id
2d99f0d1-09a0-47ea-8132-47f722709f1d (old id 1289154)
date added to LUP
2009-02-03 09:31:23
date last changed
2016-10-13 04:40:02
@misc{2d99f0d1-09a0-47ea-8132-47f722709f1d,
  abstract     = {A single-ended two-stage 3.1-10.6GHz Low Noise Amplifier aimed for Ultra Wide Band (UWB) communication is presented. The LNA is fabricated in a 90nm CMOS process and measures just 0.31x0.41 mm2 including pads. The first stage topology is common-gate, to achieve a wideband input match. The second stage is a common source stage with resistive shunt feedback, to achieve high and flat gain over a wide frequency range. The chip was measured using RF-probes and has a gain of 17.25±1.25dB, a noise figure of 4.1-9.4 dB, and an input reflection S11 better than -12dB between 3.1GHz and 10.6GHz, while consuming 8.6mA from a 1V supply.},
  author       = {Axholt, Andreas and Ahmad, Waqas and Sjöland, Henrik},
  isbn         = {978-1-4244-2492-4},
  language     = {eng},
  pages        = {25--28},
  publisher    = {ARRAY(0xe4d57d0)},
  series       = {[Host publication title missing]},
  title        = {A 90nm CMOS UWB LNA},
  url          = {http://dx.doi.org/10.1109/NORCHP.2008.4738276},
  year         = {2008},
}