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A 175uW 100MHz-2GHz inductorless receiver frontend in 65nm CMOS

Bryant, Carl LU and Sjöland, Henrik LU (2010) NORCHIP Conference, 2010
Abstract
This paper presents an inductorless ultra-low power frontend for applications such as sensor networks and medical implants. By using a completely inductorless topology the chip area is just 0.017mm2, excluding pads. A real input impedance of 300Ω is achieved with current feedback. Manufactured in 65nm CMOS, it measures more than 17dB gain from 100MHz to 2000MHz while consuming only 175μW from a 0.9V supply (The LNA consumes 115μW). The measured noise figure and IIP3 is 11dB and -16.8dBm respectively.
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author
organization
publishing date
type
Contribution to conference
publication status
published
subject
keywords
impedance matching, Low Noise Amplifier, CMOS, Mixer, LNA, inductorless, ultra low power, Front-end
pages
4 pages
conference name
NORCHIP Conference, 2010
project
EIT_UPD Wireless Communication for Ultra Portable Devices
language
English
LU publication?
yes
id
0425e5c3-e985-4e32-89b3-af84d7ccd287 (old id 1689923)
date added to LUP
2010-10-05 10:15:59
date last changed
2016-07-13 13:39:54
@misc{0425e5c3-e985-4e32-89b3-af84d7ccd287,
  abstract     = {This paper presents an inductorless ultra-low power frontend for applications such as sensor networks and medical implants. By using a completely inductorless topology the chip area is just 0.017mm2, excluding pads. A real input impedance of 300Ω is achieved with current feedback. Manufactured in 65nm CMOS, it measures more than 17dB gain from 100MHz to 2000MHz while consuming only 175μW from a 0.9V supply (The LNA consumes 115μW). The measured noise figure and IIP3 is 11dB and -16.8dBm respectively.},
  author       = {Bryant, Carl and Sjöland, Henrik},
  keyword      = {impedance matching,Low Noise Amplifier,CMOS,Mixer,LNA,inductorless,ultra low power,Front-end},
  language     = {eng},
  pages        = {4},
  title        = {A 175uW 100MHz-2GHz inductorless receiver frontend in 65nm CMOS},
  year         = {2010},
}