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Nanoscaled ferromagnetic single electron transistors

Liu, R.S.; Pettersson, H.; Suyatin, Dmitry LU ; Michalak, Lukasz LU ; Canali, Carlo LU and Samuelson, Lars LU (2007) 7TH IEEE CONFERENCE ON NANOTECHNOLOGY In [Host publication title missing] 1-3. p.420-423
Abstract
We report on a summary of fabricating and characterizing nanoscaled ferromagnetic single-electron transistors (F-SETs). One type of device is assembled with an atomic force microscope. A single 30 nm Au disc, forming the central island of the transistor, is manipulated with Angstrom precision into the gap between plasma oxidized Ni source and drain electrodes which are designed with different geometries to facilitate magnetic moment reversal at different magnetic fields. The tunnel resistances can be tuned in real-time during the device fabrication by re-positioning the An disc. A second type of device with Co electrodes and a central Au island is fabricated using a high-precision alignment procedure invoked during e-beam writing. Both... (More)
We report on a summary of fabricating and characterizing nanoscaled ferromagnetic single-electron transistors (F-SETs). One type of device is assembled with an atomic force microscope. A single 30 nm Au disc, forming the central island of the transistor, is manipulated with Angstrom precision into the gap between plasma oxidized Ni source and drain electrodes which are designed with different geometries to facilitate magnetic moment reversal at different magnetic fields. The tunnel resistances can be tuned in real-time during the device fabrication by re-positioning the An disc. A second type of device with Co electrodes and a central Au island is fabricated using a high-precision alignment procedure invoked during e-beam writing. Both devices exhibit single-electron transistor characteristics at 4.2K. From magnetotransport measurements carried out at 1.7K, we found that it is more efficient to realize spin injection and detection in Co/Au/Co devices fabricated with the second technique. A maximum TMR of about 4% was observed in these devices. (Less)
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Spintronics, Ferromagnetic Single-Electron Transistor, Coulomb Blockad, Tunneling Magnetoresistance, MAGNETO-COULOMB OSCILLATIONS, NANOPARTICLES, DEVICES
in
[Host publication title missing]
volume
1-3
pages
4 pages
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
7TH IEEE CONFERENCE ON NANOTECHNOLOGY
external identifiers
  • Scopus:52949147451
language
English
LU publication?
yes
id
15e691fd-802b-445a-a5bd-fbcd5ed17c58 (old id 2060032)
date added to LUP
2011-08-16 12:13:23
date last changed
2016-10-13 04:46:43
@misc{15e691fd-802b-445a-a5bd-fbcd5ed17c58,
  abstract     = {We report on a summary of fabricating and characterizing nanoscaled ferromagnetic single-electron transistors (F-SETs). One type of device is assembled with an atomic force microscope. A single 30 nm Au disc, forming the central island of the transistor, is manipulated with Angstrom precision into the gap between plasma oxidized Ni source and drain electrodes which are designed with different geometries to facilitate magnetic moment reversal at different magnetic fields. The tunnel resistances can be tuned in real-time during the device fabrication by re-positioning the An disc. A second type of device with Co electrodes and a central Au island is fabricated using a high-precision alignment procedure invoked during e-beam writing. Both devices exhibit single-electron transistor characteristics at 4.2K. From magnetotransport measurements carried out at 1.7K, we found that it is more efficient to realize spin injection and detection in Co/Au/Co devices fabricated with the second technique. A maximum TMR of about 4% was observed in these devices.},
  author       = {Liu, R.S. and Pettersson, H. and Suyatin, Dmitry and Michalak, Lukasz and Canali, Carlo and Samuelson, Lars},
  keyword      = {Spintronics,Ferromagnetic Single-Electron Transistor,Coulomb Blockad,Tunneling Magnetoresistance,MAGNETO-COULOMB OSCILLATIONS,NANOPARTICLES,DEVICES},
  language     = {eng},
  pages        = {420--423},
  publisher    = {ARRAY(0x3f2a090)},
  series       = {[Host publication title missing]},
  title        = {Nanoscaled ferromagnetic single electron transistors},
  volume       = {1-3},
  year         = {2007},
}