Advanced

Performance evaluation of N-well/P-sub photodiodes in 65nm CMOS process

Ahmad, Waqas LU ; Törmänen, Markus LU and Sjöland, Henrik LU (2013) 6th IEEE/International Conference on Advanced Infocomm Technology (ICAIT) In [Host publication title missing] p.135-136
Abstract
This work explores the n-well/p-substrate photodiode in a deep submicron CMOS process. A CMOS chip is designed featuring different structures of the photodiode. When characterized at a wavelength of 850nm DC responsivities between 0.12 and 0.16 A/W and 3-dB bandwidths of about 6 MHz with a roll-off of about 5.5dB/decade are measured. These investigations are very useful in designing the transimpedance amplifier and equalizer for a fully integrated optical receiver. According to the authors’ knowledge it is the first reported study on n-well/p-sub photodiodes in a 65nm CMOS technology.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
photodiodes, optical communication, CMOS technology, optical receivers, photodetectors
in
[Host publication title missing]
pages
2 pages
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
6th IEEE/International Conference on Advanced Infocomm Technology (ICAIT)
external identifiers
  • WOS:000342413300061
  • Scopus:84888240683
ISBN
978-1-4799-0464-8
DOI
10.1109/ICAIT.2013.6621520
project
EIT_DISTRANT Distributed antenna systems for efficient wireless systems
language
English
LU publication?
yes
id
271a8331-9e39-4661-b9d7-434aaac7dfff (old id 3732446)
alternative location
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6621520
date added to LUP
2013-05-02 09:11:47
date last changed
2016-10-13 04:46:22
@misc{271a8331-9e39-4661-b9d7-434aaac7dfff,
  abstract     = {This work explores the n-well/p-substrate photodiode in a deep submicron CMOS process. A CMOS chip is designed featuring different structures of the photodiode. When characterized at a wavelength of 850nm DC responsivities between 0.12 and 0.16 A/W and 3-dB bandwidths of about 6 MHz with a roll-off of about 5.5dB/decade are measured. These investigations are very useful in designing the transimpedance amplifier and equalizer for a fully integrated optical receiver. According to the authors’ knowledge it is the first reported study on n-well/p-sub photodiodes in a 65nm CMOS technology.},
  author       = {Ahmad, Waqas and Törmänen, Markus and Sjöland, Henrik},
  isbn         = {978-1-4799-0464-8},
  keyword      = {photodiodes,optical communication,CMOS technology,optical receivers,photodetectors},
  language     = {eng},
  pages        = {135--136},
  publisher    = {ARRAY(0x7d8a400)},
  series       = {[Host publication title missing]},
  title        = {Performance evaluation of N-well/P-sub photodiodes in 65nm CMOS process},
  url          = {http://dx.doi.org/10.1109/ICAIT.2013.6621520},
  year         = {2013},
}