Bipolar Monte Carlo simulation of hot carriers in III-N LEDs
(2015) 20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015 p.393-396- Abstract
We carry out bipolar Monte Carlo (MC) simulations of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recombination and intraband scattering processes and solves self-consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the... (More)
We carry out bipolar Monte Carlo (MC) simulations of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recombination and intraband scattering processes and solves self-consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the MC simulation in order to enable even more detailed predictions of device operation.
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- author
- Kivisaari, Pyry LU ; Sadi, Toufik ; Li, Jingrui ; Georgiev, Vihar ; Oksanen, Jani ; Rinke, Patrick and Tulkki, Jukka
- organization
- publishing date
- 2015-10-05
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
- article number
- 7292342
- pages
- 4 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
- conference location
- Washington, United States
- conference dates
- 2015-09-09 - 2015-09-11
- external identifiers
-
- scopus:84959337323
- ISBN
- 9781467378581
- DOI
- 10.1109/SISPAD.2015.7292342
- language
- English
- LU publication?
- yes
- id
- 3b7a0742-db9c-4521-881f-e32a69c2f461
- date added to LUP
- 2016-09-23 08:13:00
- date last changed
- 2022-01-30 06:18:54
@inproceedings{3b7a0742-db9c-4521-881f-e32a69c2f461, abstract = {{<p>We carry out bipolar Monte Carlo (MC) simulations of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recombination and intraband scattering processes and solves self-consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the MC simulation in order to enable even more detailed predictions of device operation.</p>}}, author = {{Kivisaari, Pyry and Sadi, Toufik and Li, Jingrui and Georgiev, Vihar and Oksanen, Jani and Rinke, Patrick and Tulkki, Jukka}}, booktitle = {{2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015}}, isbn = {{9781467378581}}, language = {{eng}}, month = {{10}}, pages = {{393--396}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Bipolar Monte Carlo simulation of hot carriers in III-N LEDs}}, url = {{http://dx.doi.org/10.1109/SISPAD.2015.7292342}}, doi = {{10.1109/SISPAD.2015.7292342}}, year = {{2015}}, }