Advanced

An LC-Based Tunable Low-Isolation Device for Adaptive Duplexers

Pourakbar, Mohammadreza; Törmänen, Markus LU ; Faulkner, Michael and Sjöland, Henrik LU (2013) NORCHIP Conference, 2013 In [Host publication title missing] p.1-4
Abstract
An LTE-enabled smartphone is a software-defined radio system that must cover a large number of frequency bands with different duplex differences. A proposed adaptive wideband duplexer needs a circulator to create the required initial isolation. To replace this an LC-based tunable low-isolation device is presented in this paper, providing the required tuning range for LTE Band I, II, III and VII. The circuit is implemented in a 130nm Silicon-on-Insulator (SOI) process and provides an isolation exceeding 30dB at both transmit and receive frequencies of each specified LTE frequency band. The insertion loss from PA output to antenna port is below 2dB in LTE band I. The fabricated circuit occupies an area of 2.0mm×1.2mm.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
[Host publication title missing]
pages
4 pages
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
NORCHIP Conference, 2013
external identifiers
  • Scopus:84893551871
DOI
10.1109/NORCHIP.2013.6702035
language
English
LU publication?
yes
id
7f021b4f-d081-4525-ad5e-7088f7cb873e (old id 4113640)
date added to LUP
2013-10-25 10:39:25
date last changed
2016-10-13 04:48:46
@misc{7f021b4f-d081-4525-ad5e-7088f7cb873e,
  abstract     = {An LTE-enabled smartphone is a software-defined radio system that must cover a large number of frequency bands with different duplex differences. A proposed adaptive wideband duplexer needs a circulator to create the required initial isolation. To replace this an LC-based tunable low-isolation device is presented in this paper, providing the required tuning range for LTE Band I, II, III and VII. The circuit is implemented in a 130nm Silicon-on-Insulator (SOI) process and provides an isolation exceeding 30dB at both transmit and receive frequencies of each specified LTE frequency band. The insertion loss from PA output to antenna port is below 2dB in LTE band I. The fabricated circuit occupies an area of 2.0mm×1.2mm.},
  author       = {Pourakbar, Mohammadreza and Törmänen, Markus and Faulkner, Michael and Sjöland, Henrik},
  language     = {eng},
  pages        = {1--4},
  publisher    = {ARRAY(0x9bb1dd0)},
  series       = {[Host publication title missing]},
  title        = {An LC-Based Tunable Low-Isolation Device for Adaptive Duplexers},
  url          = {http://dx.doi.org/10.1109/NORCHIP.2013.6702035},
  year         = {2013},
}