Metal-dielectric transition in Ba0.6K0.4BiO3-y single crystals studied by scanning photoelectron microscopy
(1997) In Physical Review B (Condensed Matter) 56(10).- Abstract
The electronic structure of Ba0.6K0.4BiO3-y single crystals has been studied using a scanning photoelectron microscope with a lateral resolution in the one micrometer range. It is possible to change the oxygen content (y) and convert the surface from the metallic to the dielectric state presumably by breaking the Bi-O bonds by using the focused zero-order light to irradiate the sample surface. The electronic states close to the Fermi level after such a treatment show a different doping dependence as compared to the case of potassium doping. By imaging the surface on the micrometer scale we find significant variations in the valence band intensity over the surface and observe a rather large intensity of... (More)
The electronic structure of Ba0.6K0.4BiO3-y single crystals has been studied using a scanning photoelectron microscope with a lateral resolution in the one micrometer range. It is possible to change the oxygen content (y) and convert the surface from the metallic to the dielectric state presumably by breaking the Bi-O bonds by using the focused zero-order light to irradiate the sample surface. The electronic states close to the Fermi level after such a treatment show a different doping dependence as compared to the case of potassium doping. By imaging the surface on the micrometer scale we find significant variations in the valence band intensity over the surface and observe a rather large intensity of the density of states close to the Fermi level. This will have a large impact on the discussions of dynamical lattice distortion and pseudogap behavior in the metallic phase.
(Less)
- author
- Zakharov, A. A. LU ; Johansson, U. LU ; Leandersson, M. LU ; Nylén, H. LU ; Qvarford, M. ; Lindau, I. LU and Nyholm, R. LU
- organization
- publishing date
- 1997-09-01
- type
- Contribution to journal
- publication status
- published
- in
- Physical Review B (Condensed Matter)
- volume
- 56
- issue
- 10
- publisher
- American Physical Society
- external identifiers
-
- scopus:0000844818
- ISSN
- 0163-1829
- language
- English
- LU publication?
- yes
- id
- 423ef02a-4d22-4f4a-8116-c8f4244afafc
- date added to LUP
- 2016-04-29 10:53:32
- date last changed
- 2022-01-30 03:00:31
@article{423ef02a-4d22-4f4a-8116-c8f4244afafc, abstract = {{<p>The electronic structure of Ba<sub>0.6</sub>K<sub>0.4</sub>BiO<sub>3-y</sub> single crystals has been studied using a scanning photoelectron microscope with a lateral resolution in the one micrometer range. It is possible to change the oxygen content (y) and convert the surface from the metallic to the dielectric state presumably by breaking the Bi-O bonds by using the focused zero-order light to irradiate the sample surface. The electronic states close to the Fermi level after such a treatment show a different doping dependence as compared to the case of potassium doping. By imaging the surface on the micrometer scale we find significant variations in the valence band intensity over the surface and observe a rather large intensity of the density of states close to the Fermi level. This will have a large impact on the discussions of dynamical lattice distortion and pseudogap behavior in the metallic phase.</p>}}, author = {{Zakharov, A. A. and Johansson, U. and Leandersson, M. and Nylén, H. and Qvarford, M. and Lindau, I. and Nyholm, R.}}, issn = {{0163-1829}}, language = {{eng}}, month = {{09}}, number = {{10}}, publisher = {{American Physical Society}}, series = {{Physical Review B (Condensed Matter)}}, title = {{Metal-dielectric transition in Ba0.6K0.4BiO3-y single crystals studied by scanning photoelectron microscopy}}, volume = {{56}}, year = {{1997}}, }